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UTD484 Datasheet PDF - UTC

Part Number UTD484
Description N-CHANNEL MOSFET
Manufacturers UTC 
Logo UTC Logo 



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UTD484 datasheet, circuit
UNISONIC TECHNOLOGIES CO., LTD
UTD484
N-CHANNEL ENHANCEMENT
MODE FIELD EFFECT
TRANSISTOR
DESCRIPTION
The UTD484 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* RDS(ON) < 15m@ VGS =10 V, ID =20 A
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
Pin Assignment
12345678
Packing
UTD484L-TN3-T
UTD484G-TN3-T
TO-252 G D S - - - - -
Tube
UTD484L-TN3-R
UTD484G-TN3-R
TO-252 G D S - - - - - Tape Reel
- UTD484G-K08-3030-R DFN-8(3×3) S S S G D D D D Tape Reel
Note: Pin Assignment: G: Gate D: Drain S: Source
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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QW-R502-207.E

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UTD484 equivalent
UTD484
TYPICAL CHARACTERISTICS
Power MOSFET
On-Resistance vs. Drain Current and
25 Gate Voltage
20 VGS=4.5V
15
VGS=10V
10
5
Pulse width 80μs,
0 duty cycle 0.5%.
0 4 8 12 16 20
Drain Current,ID (A)
On-Resistance vs. Junction Temperature
1.6
1.4 VGS=10V
ID=20A
1.2
VGS=4.5V
1 ID=15A
0.8
0.6
-25 -50
Pulse width 80μs,
duty cycle 0.5%.
0 25 50 75 100 125 150 175
Junction Temperature (°С)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-207.E

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Information Total 8 Pages
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