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What is 2N7002?

This electronic component, produced by the manufacturer "Unisonic Technologies", performs the same function as "N-CHANNEL POWER MOSFET".


2N7002 Datasheet PDF - Unisonic Technologies

Part Number 2N7002
Description N-CHANNEL POWER MOSFET
Manufacturers Unisonic Technologies 
Logo Unisonic Technologies Logo 


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UNISONIC TECHNOLOGIES CO., LTD
2N7002
0.3A, 60V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 2N7002 uses advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device is suitable for use as a load switch or in PWM
applications.
FEATURES
* High Density Cell Design for Low RDS(ON).
* Voltage Controlled Small Signal Switch
* Rugged and Reliable
* High Saturation Current Capability
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
2N7002G-AE2-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-23-3
Pin Assignment
123
SGD
Packing
Tape Reel
MARKING
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 6
QW-R203-037.M

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2N7002 equivalent
2N7002
TYPICAL CHARACTERICS (Cont.)
1.1
1.075
Breakdown Voltage Varisation
with Temperature
ID = 250μA
1.05
1.025
1
0.975
0.95
0.925
-50
-25 0 25 50 75 100 125 150
Junction Temperature, TJ (°C)
Capacitance Characteristics
60
40
CISS
20
Coss
10
5
CRSS
2 VGS=0V
f=1MHz
1
1 2 35
10 20 30
Drain to Source Voltage, VDS (V)
50
Power MOSFET
Body Diode Forward Voltage Varisation
with Temperature
2
1 VGS=0V
0.5
TJ =125°C
0.1
25°C
0.05
0.01
0.005
0.001
0.2
0.4 0.6 0.8
1 1.2 1.4
Body Diode Forward Voltage, VSD (V)
Gate Charge Characteristics
10
VDS = 25V
8
6
ID = 300mA
4
2
0
0 0.4 0.8 1.2 1.6 2
Gate Charge, Qg (nC)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R206-037.M


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2N7002 datasheet


1. SOT24, N-Ch Vertical DMOS FET

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