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PDF 1N60Z Data sheet ( Hoja de datos )
| Número de pieza | 1N60Z | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
1N60Z
1.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N60Z is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and high rugged avalanche
characteristics. This power MOSFET is usually used at high
speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) <11.5Ω@ VGS=10V, ID=0.6A
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
- 1N60ZG-AA3-R
1N60ZL-T92-B
1N60ZG-T92-B
1N60ZL-T92-K
1N60ZG-T92-K
1N60ZL-TN3-R
1N60ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
SOT-223
TO-92
TO-92
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
Packing
Tape Reel
Tape Box
Bulk
Tape Reel
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-724.D
1 page  
1N60Z
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R502-724.D
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 1N60Z.PDF ] | |
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