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PDF 1N60A Data sheet ( Hoja de datos )
| Número de pieza | 1N60A | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
1N60A
0.5A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N60A is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) <15Ω@VGS = 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (CRSS = 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
1N60AL-AA3-R
1N60AG-AA3-R
SOT-223
1N60AL-TM3-T
1N60AG-TM3-T
TO-251
1N60AL-TN3-R
1N60AG-TN3-R
TO-252
1N60AL-T92-B
1N60AG-T92-B
TO-92
1N60AL-T92-K
1N60AG-T92-K
TO-92
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
Packing
Tape Reel
Tube
Tape Reel
Tape Box
Bulk
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
1 of 7
QW-R502-091.K
1 page  
1N60A
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
Peak Diode Recovery dv/dt Test Circuit
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 7
QW-R502-091.K
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 1N60A.PDF ] | |
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