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PDF 11N60K-MT Data sheet ( Hoja de datos )
| Número de pieza | 11N60K-MT | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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UNISONIC TECHNOLOGIES CO., LTD
11N60K-MT
Preliminary
11A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 11N60K-MT is an N-channel enhancement mode
power MOSFET. It uses UTC advanced planar stripe, DMOS
technology to provide customers perfect switching performance,
minimal on-state resistance. It also can withstand high energy pulse
in the avalanche and commutation mode.
The UTC 11N60K-MT is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* RDS(ON) < 1.00 Ω @ VGS = 10 V, ID = 5.5 A
* Fast Switching
* With 100% Avalanche Tested
SYMBOL
2.Drain
Power MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
11N60KL-TF2-T
11N60KG-TF2-T
TO-220F2
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
123
GD S
Packing
Tube
MARKING
www.unisonic.com.tw
Copyright © 2015 Unisonic Technologies Co., Ltd
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11N60K-MT
Preliminary
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS 90%
Power MOSFET
Switching Test Circuit
10%
VGS
tD(ON)
tR
tD(OFF)
tF
Switching Waveforms
VGS
10V
QGS
QG
QGD
Gate Charge Test Circuit
Charge
Gate Charge Waveform
Unclamped Inductive Switching Test Circuit
BVDSS
IAS
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 11N60K-MT.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 11N60K-MT | N-CHANNEL POWER MOSFET | Unisonic Technologies |
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