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PDF IRL60B216 Data sheet ( Hoja de datos )
| Número de pieza | IRL60B216 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
StrongIRFET™
IRL60B216
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
1.5m
max
1.9m
G
ID (Silicon Limited)
305A
IS D (Package Limited)
195A
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free*
RoHS Compliant, Halogen-Free
G
Gate
GDS
TO-220AB
IRL60B216
D
Drain
S
Source
Base part number
IRL60B216
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRL60B216
6
ID = 100A
5
4
3 TJ = 125°C
2
1 TJ = 25°C
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
315
270
225
180
135
90
45
0
25
Limited By Package
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
April 29, 2015
1 page  
1000
TJ = 175°C
100
10 TJ = 25°C
1
0.1
0.0
VGS = 0V
0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
2.5
Fig 9. Typical Source-Drain Diode Forward Voltage
74
Id = 2.0mA
72
70
68
66
64
62
60
-60
-20 20 60 100 140
TJ , Temperature ( °C )
180
Fig 11. Drain-to-Source Breakdown Voltage
4.0
VGS = 3.5V
3.5
VGS = 4.0V
VGS = 4.5V
VGS = 8.0V
3.0 VGS = 10V
IRL60B216
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
Limited by Package
1msec
1
0.1 Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.1 1
10msec
DC
10
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-10
0
10 20 30 40 50 60
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Coss Stored Energy
2.5
2.0
1.5
5 www.irf.com
1.0
0
50 100 150
ID, Drain Current (A)
200
Fig 13. Typical On-Resistance vs. Drain Current
© 2015 International Rectifier
Submit Datasheet Feedback
April 29, 2015
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRL60B216.PDF ] | |
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