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Datasheet F50L512M41A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | F50L512M41A | 3.3V 512 Mbit SPI-NAND Flash Memory ESMT
Flash
PRODUCT LIST
Parameters VCC VCCQ1 Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. VCCQ should be the same as VCC.
2. x2 PROGRAM operation is not defined.
F50L512M41A
3.3V 512 Mbit SPI-NAND Flash Memory
Values 3.3V | Elite Semiconductor | data |
F50 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | F5001 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR polyfet rf devices
General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly Polyfet RF Devices transistor | | |
2 | F5001H | INTELIGENT POWER SWITCH Fuji Electric data | | |
3 | F501 | Diode, Rectifier American Microsemiconductor diode | | |
4 | F5019 | Froide CSF data | | |
5 | F5033 | INTELLIGENT POWER MOSFET Fuji Electric mosfet | | |
6 | F50A | Diode Switching 5KV 0.25A 2-Pin Case G-42 New Jersey Semiconductor diode | | |
7 | F50L1G41A | 3.3V 1 Gbit SPI-NAND Flash Memory ESMT
Flash
PRODUCT LIST
Parameters VCC Width Frequency Internal ECC Correction Transfer Rate Loading Throughput Power-up Ready Time Max Reset Busy Time Note: 1. x2 PROGRAM operation is not defined.
F50L1G41A (2Y)
3.3V 1 Gbit SPI-NAND Flash Memory
Values 3.3V
x1, x21, x4 104MHz
1-bit 9.6ns 104MT/s 1 Elite Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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