SIR820DP Datasheet PDF - Vishay
| Part Number | SIR820DP | |
| Description | N-Channel 30V (D-S) MOSFET | |
| Manufacturers | Vishay | |
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There is a preview and SIR820DP download ( pdf file ) link at the bottom of this page. Total 13 Pages | ||
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N-Channel 30 V (D-S) MOSFET
SiR820DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
0.0030 at VGS = 10 V
0.0038 at VGS = 4.5 V
ID (A)a
40g
40g
Qg (Typ.)
28.6 nC
PowerPAK SO-8
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information:
SiR820DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
- Low Side Switch
• Notebook PC
• Graphic Cards
• Server
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L =0.1 mH
IS
IAS
EAS
Maximum Power Dissipation
TC = 25 °C
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
30
± 20
40g
40g
30b, c
24b, c
70
40g
4.5b, c
20
20
37.8
24.2
5b, c
3.2b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
20
2.7
25
°C/W
3.3
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. Package limited.
Document Number: 67845
www.vishay.com
S12-0216-Rev. B, 30-Jan-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
SiR820DP
Vishay Siliconix
80
60
Package Limited
40
20
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
45 2.5
36 2.0
27 1.5
18 1.0
9 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67845
www.vishay.com
S12-0216-Rev. B, 30-Jan-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| Information | Total 13 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ SIR820DP.PDF Datasheet ] | |
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