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PDF SI8816EDB Data sheet ( Hoja de datos )
| Número de pieza | SI8816EDB | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si8816EDB
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) Max.
0.109 at VGS = 10 V
30 0.116 at VGS = 4.5 V
0.123 at VGS = 3.7 V
0.142 at VGS = 2.5 V
ID (A) a
2.3
2.3
2.2
2.0
Qg (Typ.)
2.4 nC
MICRO FOOT® 0.8 x 0.8
S
S2
xxxxx 3
1 0.8 mm
1
4G
D
Backside View
Bump Side View
Marking Code: xx = AH
xxx = Date/Lot traceability code
Ordering Information:
Si8816EDB-T2-E1 (lead (Pb)-free and halogen-free)
FEATURES
• TrenchFET® power MOSFET
• Ultra small 0.8 mm x 0.8 mm outline
• Ultra thin 0.4 mm max. height
• Typical ESD protection 1700 V (HBM)
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load switch
• OVP switch
• High speed switching
• DC/DC converters
• For smart phones, tablet PCs, and
mobile computing
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs)
TA = 25 °C
TA = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TA = 25 °C
TA = 25 °C
TA = 25 °C
Maximum Power Dissipation
TA = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) c
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 12
2.3 a
1.9 a
1.5 b
1.2 b
8
0.7 a
0.4 b
0.9 a
0.6 a
0.5 b
0.3 b
-55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient a, d
Maximum Junction-to-Ambient b, e
t≤5s
Symbol
RthJA
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.
c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 185 °C/W.
e. Maximum under steady state conditions is 330 °C/W.
Typical
105
200
Maximum
135
260
Unit
°C/W
S15-0346-Rev. B, 23-Feb-15
1
Document Number: 62834
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
Limited by RDS(on)*
1
100 µs
1 ms
Si8816EDB
Vishay Siliconix
0.1 100 ms
0.01
0.1
TA = 25 °C
BVDSS Limited
10 s
1 s, 10 ms
DC
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
2.5 0.8
2.0
0.6
1.5
0.4
1.0
0.2
0.5
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Current Derating*
Note
When mounted on 1" x 1" FR4 with full copper.
150
0.0
25
50 75 100 125
TA - Ambient Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-ambient thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S15-0346-Rev. B, 23-Feb-15
5
Document Number: 62834
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SI8816EDB.PDF ] | |
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