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PDF SI5418DU Data sheet ( Hoja de datos )
| Número de pieza | SI5418DU | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 30-V (D-S) MOSFET
Si5418DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30 0.0145 at VGS = 10 V
0.0185 at VGS = 4.5 V
ID (A)a
12
12
Qg (Typ.)
9.5 nC
PowerPAK ChipFET Single
1
2 Marking Code
D3
DD
4
8
7
D
D
6S
D
G
S
AI XXX
Lot Traceability
and Date Code
Part # Code
5
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
ChipFET® Package
- Small Footprint Area
- Low On-Resistance
- Thin 0.8 mm Profile
APPLICATIONS
• Load Switch, PA Switch, and Battery
Switch for Portable Applications
• DC-DC Synchronous Rectification
G
RoHS
COMPLIANT
D
Bottom View
Ordering Information: Si5418DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
VGS
ID
IDM
IS
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Limit
30
± 20
12a
12a
11.6b, c
9.3b, c
40
12a
2.6b, c
31
20
3.1b, c
2b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
RthJA
RthJC
34
3
40
°C/W
4
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 69822
S-81448-Rev. B, 23-Jun-08
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 35
30
40
25
30 20
20
Package Limited
10
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
Si5418DU
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69822
S-81448-Rev. B, 23-Jun-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet SI5418DU.PDF ] | |
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