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PDF SI4501BD Data sheet ( Hoja de datos )
| Número de pieza | SI4501BD | |
| Descripción | Complementary (N- and P-Channel) MOSFET | |
| Fabricantes | Vishay | |
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Si4501BDY
Vishay Siliconix
Complementary (N- and P-Channel) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
N-Channel 30
0.017 at VGS = 10 V
0.020 at VGS = 4.5 V
P-Channel
0.027 at VGS = - 4.5 V
-8
0.037 at VGS = - 2.5 V
ID (A)a Qg (Typ.)
12
7.9
11
-8
- 6.8
16.5
S1 1
G1 2
S2 3
G2 4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4501BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Level Shift
• Load Switch
S2
G2
D
G1
S1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
30
± 20
12
9.5
9b, c
7.2b, c
-8
±8
-8
- 6.4
- 6.4b, c
- 5.1b, c
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
TC = 70 °C
TA = 25 °C
IDM
IS
ISM
IAS
EAS
PD
40
4.0
2.2b, c
40
5
1.25
4.5
2.8
2.5b, c
- 40
- 2.8
- 1.8b, c
- 40
-5
1.25
3.1
2.0
2b, c
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
1.6b, c
1.28b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
Typ. Max.
Maximum Junction-to-Ambientb, d
t 10 s
RthJA
40 50
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
22 28
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 95 °C/W (N-Channel) and 110 °C/W (P-Channel).
P-Channel
Typ. Max.
52 62.5
32 40
Unit
°C/W
Document Number: 67441
S11-0245-Rev. A, 14-Feb-11
www.vishay.com
1
1 page  
Si4501BDY
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 0.05
10
TJ = 150 °C
1
TJ = 25 °C
0.04
0.03
ID = 10 A
0.1
0.01
0.02
0.01
TJ = 25 °C
TJ = 125 °C
0.001
0.0
0.2 0.4 0.6 0.8 1.0 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.4
0.00
0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
80
0.2
0
- 0.2
- 0.4
- 0.6
ID = 5 mA
ID = 250 μA
64
48
32
16
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
100
IDM Limited
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10 ID Limited
1 ms
1 10 ms
Limited by RDS(on)*
0.1
TC = 25 °C
Single Pulse
0.01
0.01
0.1
100 ms
1s
10 s
DC
BVDSS Limited
1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67441
S11-0245-Rev. A, 14-Feb-11
www.vishay.com
5
5 Page 
P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
Si4501BDY
Vishay Siliconix
0.1
0.01
0.0001
0.2
0.1
0.05
0.02
Single Pulse
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 110 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
0.001
0.01 0.1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67441.
Document Number: 67441
S11-0245-Rev. A, 14-Feb-11
www.vishay.com
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet SI4501BD.PDF ] | |
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