|
|
PDF SI4162DY Data sheet ( Hoja de datos )
| Número de pieza | SI4162DY | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SI4162DY (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
N-Channel 30-V (D-S) MOSFET
Si4162DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0079 at VGS = 10 V
30
0.010 at VGS = 4.5 V
ID (A)
19.3a
17.1a
Qg (Typ.)
8.8 nC
S1
S2
S3
G4
SO-8
Top View
8D
7D
6D
5D
Ordering Information: Si4162DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
APPLICATIONS
• DC/DC
- High Side
- VRM
- POL
- Server
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Avalanche Current
Avalanche Energy
L = 0.1 mH
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
IS
PD
TJ, Tstg
Soldering Recommendations (Peak Temperature)
Limit
30
± 20
19.3a
15.4
13.6b, c
10.9b, c
70
31
48
4.2a
2.1b, c
5
3.2
2.5b, c
1.6b, c
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 85 °C/W.
Symbol
RthJA
RthJC
Typical
38
20
Maximum
50
25
RoHS
COMPLIANT
Unit
V
A
mJ
A
W
°C
Unit
°C/W
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
www.vishay.com
1
1 page  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
25
Si4162DY
Vishay Siliconix
20
15
10
5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
6.0 2.0
1.6
4.5
1.2
3.0
0.8
1.5
0.4
0.0
0
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Case
150
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 68967
S-82621-Rev. A, 03-Nov-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4162DY.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SI4162DY | N-Channel 30V (D-S) MOSFET | Vishay |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |