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PDF SI4128BDY Data sheet ( Hoja de datos )
| Número de pieza | SI4128BDY | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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N-Channel 30 V (D-S) MOSFET
Si4128BDY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () (Max.)
0.021 at VGS = 10 V
30
0.033 at VGS = 4.5 V
ID (A)
12a
6
Qg (Typ.)
3.7 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Notebook System Power
• Low Current DC/DC
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
D
G
Top View
Ordering Information: Si4128BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
TC = 25 °C
TA = 25 °C
L = 0.1 mH
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
Limit
30
± 25
12a
9.7
8.3b, c
6.7b, c
40
4.2
2b, c
10
5
5
3.2
2.4b, c
1.5b, c
- 55 to 150
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t 10 s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 85 °C/W.
Symbol
RthJA
RthJF
Typical
42
19
Maximum
53
25
Unit
°C/W
Document Number: 63584
www.vishay.com
S11-2183-Rev. A, 07-Nov-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
15 5
12
Package Limited
9
4
3
62
31
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0
25
Si4128BDY
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63584
www.vishay.com
S11-2183-Rev. A, 07-Nov-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI4128BDY.PDF ] | |
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