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PDF SI2372DS Data sheet ( Hoja de datos )
| Número de pieza | SI2372DS | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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Si2372DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω) MAX.
0.033 at VGS = 10 V
30 0.038 at VGS = 6 V
0.043 at VGS = 4.5 V
SOT-23 (TO-236)
ID (A) d
5.3
4.9
4.6
Qg (TYP.)
2.9 nC
D
3
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested
• Material categorization:
For definitions of compliance
www.vishay.com/doc?99912
please
see
APPLICATIONS
• DC/DC converter
• Load switch
• Power management
D
2
S
1
G
Top View
Marking Code: F4
Ordering Information:
Si2372DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 100 μs)
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
30
± 20
5.3
4.2
4 a, b
3.2 a, b
25
1.4
0.8 a, b
1.7
1.1
0.96 a, b
0.62 a, b
-55 to 150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a, c
Maximum Junction-to-Foot (Drain)
t≤5s
Steady State
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under steady state conditions is 175 °C/W.
d. TC = 25 °C
SYMBOL
RthJA
RthJF
TYPICAL
100
60
MAXIMUM
130
75
UNIT
°C/W
S14-0769-Rev. A, 14-Apr-14
1
Document Number: 63244
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (TJ = 25 °C, unless otherwise noted)
6
Si2372DS
Vishay Siliconix
4.5
3
1.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
2 0.9
0.72
1.5
0.54
1
0.36
0.5
0.18
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power Junction-to-Foot
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Junction-to-Ambient
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-0769-Rev. A, 14-Apr-14
5
Document Number: 63244
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet SI2372DS.PDF ] | |
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