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PDF SI2304DDS Data sheet ( Hoja de datos )

Número de pieza SI2304DDS
Descripción N-Channel 30V (D-S) MOSFET
Fabricantes Vishay 
Logotipo Vishay Logotipo



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New Product
N-Channel 30-V (D-S) MOSFET
Si2304DDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.060 at VGS = 10 V
30
0.075 at VGS = 4.5 V
ID (A)a
3.6
3.6
Qg (Typ.)
2.1 nC
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter
TO-236
(SOT-23)
G1
S2
3D
Top View
Si2304DDS (P4)*
* Marking Code
Ordering Information: Si2304DDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
Limit
30
± 20
3.6a
3.3
3.3
2.7
15
1.4
0.9b, c
1.7
1.1
1.1b, c
0.7b, c
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 130 °C/W.
Symbol
RthJA
RthJF
Typical
90
60
Maximum
115
75
Unit
°C/W
Document Number: 65175
S09-1496-Rev. A, 10-Aug-09
www.vishay.com
1

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SI2304DDS pdf
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
5 2.0
4
Package Limited
3
2
1
1.5
1.0
0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0.0
25
Si2304DDS
Vishay Siliconix
50 75 100 125
TC - Case Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65175
S09-1496-Rev. A, 10-Aug-09
www.vishay.com
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