SI1539DDL Datasheet PDF - Vishay
Part Number | SI1539DDL | |
Description | N- and P-Channel 30V (D-S) MOSFET | |
Manufacturers | Vishay | |
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Si1539DDL
Vishay Siliconix
N- and P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel 30
P-Channel -30
RDS(on) (Ω) Max.
0.388 at VGS = 10 V
0.525 at VGS = 4.5 V
1.070 at VGS = -10 V
2.590 at VGS = -5 V
ID (A) a
0.7
0.6
-0.5
-0.3
Qg (TYP.)
0.55
0.8
SOT-363
SC-70 Dual (6 leads)
S2
G2 4
D1 5
6
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• DC/DC converter
• Load switch
D1 S2
1
S1
Top View
2
G1
3
D2
Marking Code: RI
Ordering Information:
Si1539DDL-T1-GE3 (lead (Pb)-free and halogen free)
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL N-CHANNEL
P-CHANNEL
Drain-Source Voltage
VDS 30
-30
Gate-Source Voltage
VGS ± 20
± 30
TC = 25 °C
0.7 -0.46
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
0.6
0.7 b, c
0.5 b, c
-0.36
-0.42 b, c
-0.33 b, c
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
0.3
0.2 b, c
-0.3
-0.2 b, c
Pulsed Drain Current (t = 100 μs)
IDM 2
-1
TC = 25 °C
0.34 0.34
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
0.22
0.29 b, c
0.18 b, c
0.22
0.29 b, c
0.18 b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to +150
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
N-CHANNEL
TYP.
MAX.
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
RthJA 365 438
Steady State
RthJF
308
370
Notes
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 486 °C/W (N-Channel) and 486 °C/W (P-Channel).
P-CHANNEL
TYP.
MAX.
365 438
308 370
UNIT
°C/W
S15-0596-Rev. A, 30-Mar-15
1
Document Number: 62999
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
|
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 0.8
TJ = 150 °C
1
TJ = 25 °C
0.6
0.4
0.2
Si1539DDL
Vishay Siliconix
ID = 0.6 A
TJ = 125 °C
TJ = 25 °C
0.1
0.0
0.3 0.6 0.9 1.2
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
1.5
2
0
2 4 6 8 10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
6.4
1.8
1.6 ID = 250 μA
4.8
3.2
1.4 1.6
1.2
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
0.001
0.01
0.1
1
10
Time (s)
Single Pulse Power, Junction-to-Ambient
10
Limited by IDM
Limited by RDS(on)*
1
BVDSS Limited
100 μs
1 ms
0.1
10 ms
100 ms
TA = 25 °C
Single Pulse
0.01
1s
10 s, DC
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
S15-0596-Rev. A, 30-Mar-15
5
Document Number: 62999
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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