SI1428EDH Datasheet PDF - Vishay
Part Number | SI1428EDH | |
Description | N-Channel 30V (D-S) MOSFET | |
Manufacturers | Vishay | |
Logo | ||
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N-Channel 30 V (D-S) MOSFET
Si1428EDH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) ()
0.045 at VGS = 10 V
0.049 at VGS = 4.5 V
0.060 at VGS = 2.5 V
ID (A)a
4
4
4
Qg (Typ.)
4 nC
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
G3
5D
4S
Top View
Marking Code
AS XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1428EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Typical ESD Protection 2000 V HBM
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices
- Load Switch
- Battery Switch
• Load Switch for Motors, Relays and Solenoids
R
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Limit
30
± 12
4a
4a
4a, b, c
3.7b, c
20
2.3a
1.3b, c
2.8
1.8
1.56b, c
1.0b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited, TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
RthJA
RthJF
Typical
60
34
Maximum
80
45
Unit
°C/W
Document Number: 67825
www.vishay.com
S11-0861-Rev. A, 02-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
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New Product
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
8 3.0
6
Package Limited
4
2.5
2.0
1.5
1.0
2
0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0.0
25
Si1428EDH
Vishay Siliconix
50 75 100 125
TF - Foot Temperature (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67825
www.vishay.com
S11-0861-Rev. A, 02-May-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Information | Total 12 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ SI1428EDH.PDF Datasheet ] |
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