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PDF SI1416EDH Data sheet ( Hoja de datos )
| Número de pieza | SI1416EDH | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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New Product
N-Channel 30 V (D-S) MOSFET
Si1416EDH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω)
0.058 at VGS = 10 V
0.064 at VGS = 4.5 V
0.077 at VGS = 2.5 V
ID (A)a
3.9
3.9
3.9
Qg (Typ.)
3.5 nC
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
G3
5D
4S
Top View
Marking Code
AR XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1416EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Typical ESD Protection 1500 V in HBM
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices such as Smart Phones and Tablet PCs
- DC/DC Converters
- High Frequency Switching
D
- OVP Switch
- Load Switch
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
TJ, Tstg
Limit
30
± 12
3.9a
3.9a
3.9a, b, c
3.9a, b, c
15
2.3a
1.3b, c
2.8
1.8
1.56b, c
1.0b, c
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited, TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
RthJA
RthJF
Typical
60
34
Maximum
80
45
Unit
°C/W
Document Number: 67580
www.vishay.com
S11-0611-Rev. A, 04-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
New Product
Si1416EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
100
Limited by RDS(on)*
10
100 μs
1
1 ms
10 ms
0.1
TA = 25 °C
Single Pulse
0.01
0.1
1
BVDSS Limited
10
100 ms
1 s, 10 s
DC
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
6 3.0
5
Package Limited
4
2.5
2.0
3 1.5
2 1.0
1 0.5
0
0 25 50 75 100 125 150
TL - Lead Temperature (°C)
Current Derating*
0
25 50 75 100 125 150
TL - Lead Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 67580
www.vishay.com
S11-0611-Rev. A, 04-Apr-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead
0.067
(1.702)
Return to Index
Return to Index
0.016
(0.406)
0.026
(0.648)
0.010
(0.241)
Recommended Minimum Pads
Dimensions in Inches/(mm)
www.vishay.com
18
Document Number: 72602
Revision: 21-Jan-08
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet SI1416EDH.PDF ] | |
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