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PDF SI1308EDL Data sheet ( Hoja de datos )
| Número de pieza | SI1308EDL | |
| Descripción | N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Si1308EDL
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
30
RDS(on) (Ω) MAX.
0.132 at VGS = 10 V
0.144 at VGS = 4.5 V
0.185 at VGS = 2.5 V
ID (A) c
1.5
1.4
1.3
SOT-323
SC-70 (3 leads)
Qg (TYP.)
1.4 nC
D
3
2
S
1
G
Top View
Marking Code: KG
Ordering Information:
Si1308EDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg tested
• Typical ESD performance 1800 V
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Smart phones, tablet PC’s
- DC/DC converters
- Boost converters
- Load switch, OVP switch
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs)
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
LIMIT
30
± 12
1.4
1.1
1.5 a, b
1.2 a, b
6
0.4
0.3
0.5
0.3
0.4 a, b
0.3 a, b
-55 to +150
260
UNIT
V
A
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient a, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
Notes
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. Based on TC = 25 °C.
d. Maximum under steady state conditions is 360 °C/W.
SYMBOL
RthJA
RthJF
TYP.
250
225
MAX.
300
270
UNIT
°C/W
S14-1997-Rev. C, 06-Oct-14
1
Document Number: 63399
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1.8
Si1308EDL
Vishay Siliconix
1.35
0.9
0.45
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
0.45
0.36
0.27
0.18
0.09
25 50 75 100 125
TC - Case Temperature (°C)
Power, Junction-to-Case
150
0.00
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ (max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S14-1997-Rev. C, 06-Oct-14
5
Document Number: 63399
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page 
www.vishay.com
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1 Document Number: 91000
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