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PDF SI1028X Data sheet ( Hoja de datos )
| Número de pieza | SI1028X | |
| Descripción | Dual N-Channel 30V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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Dual N-Channel 30 V (D-S) MOSFET
Si1028X
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) () Max.
0.650 at VGS = 10 V
30
0.770 at VGS = 4.5 V
ID (A)
0.48
0.45
Qg (Typ.)
0.5
S1 1
G1 2
D2 3
SC-89
6 D1
5 G2
4 S2
FEATURES
• TrenchFET® Power MOSFET
• ESD Protected: 550 V Typical HBM
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
BENEFITS
• Low Offset Voltage
• Low-Voltage Operation
• High-Speed Circuits
• Small Board Area
APPLICATIONS
• Load/Signal Switching for Portable Devices
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories
• Battery Operated Systems
Marking Code
G XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1028X-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
Pulsed Drain Current (t = 300 µs)
IDM
Continuous Source-Drain Diode Current
TA = 25 °C
IS
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
0.48a, b
0.45a, b
1
0.18a, b
0.22a, b
0.14a, b
- 55 to 150
Unit
V
A
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
t 5 s
Steady State
Symbol
RthJA
Typ.
470
560
Max.
565
675
Unit
°C/W
Document Number: 63862
For technical questions, contact: [email protected]
www.vishay.com
S12-1956-Rev. B, 13-Aug-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10 0.24
Si1028X
Vishay Siliconix
1
Limited by RDS(on)*
0.1
100 μs
1 ms
10 ms
100 ms
0.01 1 s
DC, 10 s
TA = 25 °C
Single Pulse
BVDSS Limited
0.001
0.1 1 10
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
100
Safe Operating Area, Junction-to-Ambient
0.18
0.12
0.06
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power Derating, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.0001
Single Pulse
0.001
0.01 0.1
Square Wave Pulse Duration (s)
1
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
100
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63862.
Document Number: 63862
For technical questions, contact: [email protected]
www.vishay.com
S12-1956-Rev. B, 13-Aug-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SI1028X.PDF ] | |
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