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What is IPP023N10N5?

This electronic component, produced by the manufacturer "Infineon", performs the same function as "MOSFET ( Transistor )".


IPP023N10N5 Datasheet PDF - Infineon

Part Number IPP023N10N5
Description MOSFET ( Transistor )
Manufacturers Infineon 
Logo Infineon Logo 


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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,100V
IPP023N10N5
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket

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IPP023N10N5 equivalent
OptiMOSª5Power-Transistor,100V
IPP023N10N5
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
100
2.2
-
-
-
-
-
-
124
Values
Typ. Max.
--
3 3.8
0.1 7
10 100
1 100
2.0 2.3
2.3 2.8
1.3 2.0
248 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=270µA
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
m
VGS=10V,ID=100A
VGS=6V,ID=50A
-
S |VDS|>2|ID|RDS(on)max,ID=100A
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Unit
Typ. Max.
12000 15600 pF
1810 2353 pF
80 140 pF
33 -
ns
26 -
ns
77 -
ns
29 -
ns
Note/TestCondition
VGS=0V,VDS=50V,f=1MHz
VGS=0V,VDS=50V,f=1MHz
VGS=0V,VDS=50V,f=1MHz
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate to drain charge1)
Switching charge
Gate charge total
Gate plateau voltage
Output charge1)
Qgs
Qgd
Qsw
Qg
Vplateau
Qoss
Min.
-
-
-
-
-
-
Values
Typ. Max.
54 -
34 58
52 -
168 210
4.5 -
213 283
Unit Note/TestCondition
nC VDD=50V,ID=100A,VGS=0to10V
nC VDD=50V,ID=100A,VGS=0to10V
nC VDD=50V,ID=100A,VGS=0to10V
nC VDD=50V,ID=100A,VGS=0to10V
V VDD=50V,ID=100A,VGS=0to10V
nC VDD=50V,VGS=0V
1) Defined by design. Not subject to production test
2) See Gate charge waveformsfor parameter definition
Final Data Sheet
5
Rev.2.1,2014-05-05


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Part Details

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IPP023N10N5The function is MOSFET ( Transistor ). InfineonInfineon

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