IPB017N08N5 Datasheet PDF - Infineon
| Part Number | IPB017N08N5 | |
| Description | MOSFET ( Transistor ) | |
| Manufacturers | Infineon | |
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There is a preview and IPB017N08N5 download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,80V
IPB017N08N5
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
|
| |
 
OptiMOSª5Power-Transistor,80V
IPB017N08N5
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance1)
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
80
2.2
-
-
-
-
-
-
114
Values
Typ. Max.
--
3 3.8
0.1 1
10 100
1 100
1.5 1.7
1.8 2.1
1.5 2.3
228 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=280µA
µA
VDS=80V,VGS=0V,Tj=25°C
VDS=80V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=100A
VGS=6V,ID=50A
Ω-
S |VDS|>2|ID|RDS(on)max,ID=100A
Table5Dynamiccharacteristics1)
Parameter
Symbol
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Unit
Typ. Max.
13000 16900 pF
2000 2600 pF
86 150 pF
40 -
ns
36 -
ns
102 -
ns
37 -
ns
Note/TestCondition
VGS=0V,VDS=40V,f=1MHz
VGS=0V,VDS=40V,f=1MHz
VGS=0V,VDS=40V,f=1MHz
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.6Ω
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.6Ω
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.6Ω
VDD=40V,VGS=10V,ID=100A,
RG,ext=1.6Ω
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate to drain charge1)
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Qgs
Qgd
Qsw
Qg
Vplateau
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
57 -
37 56
59 -
178 223
4.5 -
153 -
207 275
Unit Note/TestCondition
nC VDD=40V,ID=100A,VGS=0to10V
nC VDD=40V,ID=100A,VGS=0to10V
nC VDD=40V,ID=100A,VGS=0to10V
nC VDD=40V,ID=100A,VGS=0to10V
V VDD=40V,ID=100A,VGS=0to10V
nC VDS=0.1V,VGS=0to10V
nC VDD=40V,VGS=0V
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.1,2014-05-05
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IPB017N08N5 electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IPB017N08N5.PDF Datasheet ] | |
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