|
|
Datasheet IKP04N60T-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
IKP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IKP01N120H2 | HighSpeed 2-Technology IKP01N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
• Designed for:
- SMPS
- Lamp Ballast - ZVS-Converter
G E
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology for 1200V applications offers:
- loss reduction  Infineon data | | |
| 2 | IKP03N120H2 | HighSpeed 2-Technology IKP03N120H2, IKW03N120H2
IKB03N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - t  Infineon Technologies data | | |
| 3 | IKP04N60T | IGBT, Insulated Gate Bipolar Transistor IKP04N60T
TRENCHSTOPTM Series
q
Low Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
• Very low VCE(sat) 1.5V (typ.) • Maximum Junction Temperature 175°C • Short circuit withstand time 5µs • Designed for:
- Infineon igbt | | |
| 4 | IKP06N60T | IGBT, Insulated Gate Bipolar Transistor TRENCHSTOP™ Series
IKP06N60T p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Desig Infineon igbt | | |
| 5 | IKP08N65F5 | IGBT, Insulated Gate Bipolar Transistor IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
IKP08N65F5
650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKP08N65F5
Highspeedswitchingseriesfifthgeneration
Highspeed Infineon igbt | | |
| 6 | IKP08N65H5 | IGBT, Insulated Gate Bipolar Transistor IGBT
Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode
IKP08N65H5
650VDuoPackIGBTandDiode Highspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IKP08N65H5
Highspeedswitchingseriesfifthgeneration
Highspeed5IG Infineon igbt | | |
| 7 | IKP10N60T | IGBT, Insulated Gate Bipolar Transistor TrenchStop® Series
IKP10N60T p
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
C
• • • •
•
• • • • • • •
Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand t Infineon Technologies igbt | |
| Esta página es del resultado de búsqueda del IKP04N60T-PDF.HTML. Si pulsa el resultado de búsqueda de IKP04N60T-PDF.HTML se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |