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Número de pieza | IKP01N120H2 | |
Descripción | HighSpeed 2-Technology | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IKP01N120H2 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! IKP01N120H2
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
C
• Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
G
E
- optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC2 for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
PG-TO-220-3-1
Type
IKP01N120H2
VCE
1200V
IC
1A
Eoff
0.09mJ
Tj
150°C
Marking
Package
K01H1202 PG-TO-220-3-1
Maximum Ratings
Parameter
Collector-emitter voltage
Triangular collector current
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE ≤ 1200V, Tj ≤ 150°C
Diode forward current
TC = 25°C
TC = 100°C
Gate-emitter voltage
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
VGE
Ptot
Tj , Tstg
-
Value
1200
3.2
1.3
3.5
3.5
Unit
V
A
3.2
1.3
±20
28
-40...+150
260
V
W
°C
2 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.3 May 06
1 page IKP01N120H2
5A
Ic
4A
3A
TC=80°C
2A
TC=110°C
1A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 241Ω)
10A
1A
tp = 1 µs
2µs
5µs
0,1A
20µs
50µs
200µs
,01A
DC
1V 10V 100V 1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
30W
25W
20W
15W
10W
5W
0W
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
4A
3A
2A
1A
0A
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
Power Semiconductors
5
Rev. 2.3 May 06
5 Page IKP01N120H2
4.0A
3.5A
3.0A
2.5A
TJ=150°C
T J=2 5°C
-140A/us
-160A/us
T =150°C
J
-180A/us
-200A/us
T =25°C
J
100O hm
20 0O hm
3 00O hm
RG, GATE RESISTANCE
Figure 25. Typical reverse recovery
current as a function of diode current
slope
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
4A TJ=150°C
2A
T J=2 5°C
100Ohm
200Ohm
300Ohm
RG, GATE RESISTANCE
Figure 26. Typical diode peak rate of fall
of reverse recovery current as a
function of diode current slope
(VR=800V, IF=3A,
Dynamic test circuit in Figure E)
3.0V
IF=1A
2.5V
IF=0.5A
2.0V
IF=0.25A
1.5V
0A
0V 1V 2V 3V 4V 5V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current
as a function of forward voltage
1.0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward
voltage as a function of junction
temperature
Power Semiconductors
11
Rev. 2.3 May 06
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet IKP01N120H2.PDF ] |
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