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PDF IHW40N60R Data sheet ( Hoja de datos )
| Número de pieza | IHW40N60R | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IHW40N60R (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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IGBT
ReverseconductingIGBT
IHW40N60R
ResonantSwitchingSeries
Datasheet
IndustrialPowerControl
1 page  
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
Gate-emitter threshold voltage
VGE(th)
Zero gate voltage collector current ICES
Gate-emitter leakage current
Transconductance
Integrated gate resistor
IGES
gfs
rG
VGE=0V,IC=0.50mA
VGE=15.0V,IC=40.0A
Tvj=25°C
Tvj=175°C
VGE=0V,IF=40.0A
Tvj=25°C
Tvj=175°C
IC=0.58mA,VCE=VGE
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
VCE=0V,VGE=20V
VCE=20V,IC=40.0A
IHW40N60R
min.
Value
typ.
max. Unit
600 -
-V
- 1.65 2.05 V
- 2.10 -
- 1.65 2.05 V
- 1.90 -
4.1 4.9 5.7 V
- - 40.0 µA
- - 3000.0
- - 100 nA
- 19.0 - S
none
Ω
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
DynamicCharacteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Symbol Conditions
Cies
Coes VCE=25V,VGE=0V,f=1MHz
Cres
QG
VCC=480V,IC=40.0A,
VGE=15V
LE
Value
Unit
min. typ. max.
- 2370 -
- 80 - pF
- 65 -
- 223.0 - nC
- 13.0 - nH
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
IGBTCharacteristic,atTvj=25°C
Turn-off delay time
Fall time
Turn-off energy
td(off)
tf
Eoff
Tvj=25°C,
VCC=400V,IC=40.0A,
VGE=0.0/15.0V,
RG(on)=5.6Ω,RG(off)=5.6Ω,
Lσ=90nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
min.
Value
typ.
max. Unit
- 193 - ns
- 24 - ns
- 0.75 - mJ
5 Rev.2.6,2015-01-26
5 Page 
ResonantSwitchingSeries
IHW40N60R
16
120V
480V
14
12
10
1000
Cies
Coes
Cres
8
6 100
4
2
0
0 50 100 150 200
QGE,GATECHARGE[nC]
Figure 17. Typicalgatecharge
(IC=40A)
10
250 0
10 20 30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
11
0.1
D=0.5
0.1
D=0.5
0.2 0.2
0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse
single pulse
0.01 0.01
0.001
1E-6
i: 1 2 3
4
ri[K/W]: 0.0655 0.1301 0.1899
0.1045
τi[s]: 1.4E-4 1.0E-3 0.01054274 0.07949796
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 19. IGBTtransientthermalimpedance
(D=tp/T)
0.001
1E-6
i: 1 2 3
4
ri[K/W]: 0.0655 0.1301 0.1899
0.1045
τi[s]: 1.4E-4 1.0E-3 0.01054274 0.07949796
1E-5 1E-4 0.001 0.01
tp,PULSEWIDTH[s]
0.1
1
Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
11 Rev.2.6,2015-01-26
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet IHW40N60R.PDF ] | |
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