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Datasheet IGP20N60H3 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | IGP20N60H3 | IGBT, Insulated Gate Bipolar Transistor IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGP20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOPTMtechnologyof |  Infineon | igbt |
IGP Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | IGP01N120H2 | HighSpeed 2-Technology IGP01N120H2, IGD01N120H2
HighSpeed 2-Technology
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel  Infineon Technologies data | | |
| 2 | IGP03N120H2 | IGBT, Insulated Gate Bipolar Transistor IGP03N120H2 IGW03N120H2
HighSpeed 2-Technology
• Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies
• 2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior Infineon Technologies igbt | | |
| 3 | IGP06N60T | IGBT, Insulated Gate Bipolar Transistor IGP06N60T
TRENCHSTOP™ Series
q
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- v Infineon igbt | | |
| 4 | IGP10N60T | Low Loss IGBT IGP10N60T
TRENCHSTOP™ Series
q
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for :
- Variable Speed Drive for washing machines and air condit Infineon igbt | | |
| 5 | IGP15N60T | Low Loss IGBT TrenchStop® Series
IGP15N60T q
Low Loss IGBT in TrenchStop® and Fieldstop technology
• Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for :
- Frequency Converters - Uninterrupted Power Supply • TrenchStop® and Infineon igbt | | |
| 6 | IGP20N60H3 | IGBT, Insulated Gate Bipolar Transistor IGBT
HighspeedIGBTinTrenchandFieldstoptechnology
IGP20N60H3
600Vhighspeedswitchingseriesthirdgeneration
Datasheet
IndustrialPowerControl
IGP20N60H3
Highspeedswitchingseriesthirdgeneration
HighspeedIGBTinTrenchandFieldstoptechnology
Features:
TRENCHSTOPTMtechnologyof Infineon igbt | | |
| 7 | IGP20N65F5 | IGBT, Insulated Gate Bipolar Transistor IGBT
Highspeed5FASTIGBTinTRENCHSTOPTM5technology
IGP20N65F5
650VIGBThighspeedswitchingseriesfifthgeneration
Datasheet
IndustrialPowerControl
IGP20N65F5
Highspeedswitchingseriesfifthgeneration
Highspeed5FASTIGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
High Infineon igbt | |
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