BSZ075N08NS5 Datasheet PDF - Infineon
Part Number | BSZ075N08NS5 | |
Description | MOSFET ( Transistor ) | |
Manufacturers | Infineon | |
Logo | ||
There is a preview and BSZ075N08NS5 download ( pdf file ) link at the bottom of this page. Total 12 Pages |
Preview 1 page No Preview Available ! MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSª5Power-Transistor,80V
BSZ075N08NS5
DataSheet
Rev.2.1
Final
PowerManagement&Multimarket
|
|
OptiMOSª5Power-Transistor,80V
BSZ075N08NS5
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
80
2.2
-
-
-
-
-
-
21
Values
Typ. Max.
--
3 3.8
0.1 1
10 100
1 100
6.2 7.5
8.5 10.2
1.3 2
42 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=36µA
µA
VDS=80V,VGS=0V,Tj=25°C
VDS=80V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=20A
VGS=6V,ID=5A
Ω-
S |VDS|>2|ID|RDS(on)max,ID=20A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance1)
Reverse transfer capacitance1)
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
1600 2080
280 365
15 26
10 -
4-
19 -
4-
Unit Note/TestCondition
pF VGS=0V,VDS=40V,f=1MHz
pF VGS=0V,VDS=40V,f=1MHz
pF VGS=0V,VDS=40V,f=1MHz
ns
VDD=40V,VGS=10V,ID=20A,
RG,ext=1.6Ω
ns
VDD=40V,VGS=10V,ID=20A,
RG,ext=1.6Ω
ns
VDD=40V,VGS=10V,ID=20A,
RG,ext=1.6Ω
ns
VDD=40V,VGS=10V,ID=20A,
RG,ext=1.6Ω
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate to drain charge1)
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Qgs
Qgd
Qsw
Qg
Vplateau
Qg(sync)
Qoss
Min.
-
-
-
-
-
-
-
Values
Typ. Max.
7.5 -
5.2 7.8
8.1 -
24 29.5
4.6 -
20 -
29 38.6
Unit Note/TestCondition
nC VDD=40V,ID=20A,VGS=0to10V
nC VDD=40V,ID=20A,VGS=0to10V
nC VDD=40V,ID=20A,VGS=0to10V
nC VDD=40V,ID=20A,VGS=0to10V
V VDD=40V,ID=20A,VGS=0to10V
nC VDS=0.1V,VGS=0to10V
nC VDD=40V,VGS=0V
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.1,2014-05-05
Preview 5 Page |
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Information | Total 12 Pages | |
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