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Número de pieza | H02N60S | |
Descripción | N-Channel Power Field Effect Transistor | |
Fabricantes | HI-SINCERITY | |
Logotipo | ||
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No Preview Available ! HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 1/6
H02N60S Series
N-Channel Power Field Effect Transistor
Description
This high voltage MOSFET uses an advanced termination scheme to
provide enhanced voltage-blocking capability without degratding
performance over time. In addition, this advanced MOSFET is designed to
withstand high energy in avalanche and commutation modes. The new
energy efficient design also offers a drain-to-source diode with a fast
recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and saafety margin against unexpected voltage transients.
Features
• Robust High Voltage Termination
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast
Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
Absolute Maximum Ratings
H02N60S Series Pin Assignment
Tab
3
2
1
Tab
3
2
Tab 1
3-Lead Plastic TO-252
Package Code: J
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-251
Package Code: I
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220AB
Package Code: E
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3
2
1
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
3
2
1
D
H02N60S Series
Symbol:
G
S
Symbol
ID
IDM
VGS
PD
Tj, Tstg
EAS
TL
Parameter
Drain to Current (Continuous)
Drain to Current (Pulsed)
Gate-to-Source Voltage (Continue)
Total Power Dissipation (TC=25oC)
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
Derate above 25°C
H02N60SI (TO-251) / H02N60SJ (TO-252)
H02N60SE (TO-220AB)
H02N60SF (TO-220FP)
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C
(VDD=100V, VGS=10V, IL=2A, L=10mH, RG=25Ω)
Maximum Lead Temperature for Soldering Purposes, 1/8”
from case for 10 seconds
Value
2
8
±30
50
50
25
0.4
0.4
0.33
-55 to 150
35
260
Units
A
A
V
W
W/°C
°C
mJ
°C
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification
1 page HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200504
Issued Date : 2005.05.01
Revised Date : 2005.09.28
Page No. : 5/6
TO-220AB Dimension
A
D
B
E
F
H
I
G
Tab
P
L
3
2
1
M
O
J
3-Lead TO-220AB
Plastic Package
HSMC Package Code: E
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
C Normal: None H
E
0 2N60S
Date Code
Control Code
K
Note: Green label is used for pb-free packing
N Pin Style: 1.Gate 2 & Tab.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM Min. Max.
A 5.58 7.49
B 8.38 8.90
C 4.40 4.70
D 1.15 1.39
E 0.35 0.60
F 2.03 2.92
G 9.66 10.28
H - *16.25
I - *3.83
J 3.00 4.00
K 0.75 0.95
L 2.54 3.42
M 1.14 1.40
N - *2.54
O 12.70 14.27
P 14.48 15.87
*: Typical, Unit: mm
TO-220FP Dimension
A
α1
D
α2 α3
α4
α5
EO
C
G
F
M
I
3
2
1
N
L
J
K
3-Lead TO-220FP
Plastic Package
HSMC Package Code: F
Marking:
Pb Free Mark
Pb-Free: " . " (Note)
Normal: None
HF
0 2N60S
Date Code
Control Code
Note: Green label is used for pb-free packing
Pin Style: 1.Gate 2.Drain 3.Source
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
D
E
F
G
I
J
K
L
M
N
O
α1/2/4/5
α3
Min.
6.48
4.40
2.34
0.45
9.80
3.10
2.70
0.60
2.34
12.48
15.67
0.90
2.00
-
-
Max.
7.40
4.90
3.00
0.80
10.36
3.60
3.43
1.00
2.74
13.60
16.20
1.47
2.96
*5o
*27o
*: Typical, Unit: mm
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H02N60SI, H02N60SJ, H02N60SE, H02N60SF
HSMC Product Specification
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet H02N60S.PDF ] |
Número de pieza | Descripción | Fabricantes |
H02N60S | N-Channel Power Field Effect Transistor | HI-SINCERITY |
H02N60SE | N-Channel Power Field Effect Transistor | HI-SINCERITY |
H02N60SF | N-Channel Power Field Effect Transistor | HI-SINCERITY |
H02N60SI | N-Channel Power Field Effect Transistor | HI-SINCERITY |
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