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1N6383 Datasheet PDF - ON Semiconductor

Part Number 1N6383
Description Zener Transient Voltage Suppressors
Manufacturers ON Semiconductor 
Logo ON Semiconductor Logo 

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1N6383 datasheet, circuit
1N6382 − 1N6389 Series
(ICTE−10C − ICTE−36C,
MPTE−8C − MPTE−45C)
1500 Watt Peak Power
MosorbZener Transient
Voltage Suppressors
Bidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, highenergy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmeticaxial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features:
Working Peak Reverse Voltage Range 8 V to 45 V
Peak Power 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16from the case for 10 seconds
POLARITY: Cathode band does not imply polarity
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ TL 25°C
PPK
1500
Watts
Steady State Power Dissipation
@ TL 75°C, Lead Length = 3/8
Derated above TL = 75°C
Thermal Resistance, JunctiontoLead
Operating and Storage
Temperature Range
PD
RqJL
TJ, Tstg
5.0
20
20
65 to
+175
Watts
mW/°C
°C/W
°C
1. Nonrepetitive current pulse per Figure 4 and derated above TA = 25°C
per Figure 2.
*Please see 1N6373 – 1N6381 (ICTE5 ICTE36, MPTE5 MPTE45)
for Unidirectional Devices
http://onsemi.com
AXIAL LEAD
CASE 41A
PLASTIC
L
MPTE
xxC
1N
63xx
YYWW
L
ICTE
xxC
YYWW
L = Assembly Location
MPTExxC = ON Device Code
ICTExxC = ON Device Code
1N63xx = JEDEC Device Code
YY = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MPTExxC
MPTExxCRL4
Axial Lead
Axial Lead
500 Units/Box
1500/Tape & Reel
ICTExxC*
ICTExxCRL4
Axial Lead
Axial Lead
500 Units/Box
1500/Tape & Reel
1N63xx
Axial Lead 500 Units/Box
1N63xxRL4
Axial Lead 1500/Tape & Reel
*ICTE10C Not Available in 500 Units/Box
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
1N6382/D

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1N6383 equivalent
1N6382 1N6389 Series (ICTE10C ICTE36C, MPTE8C MPTE45C)
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 7.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 8. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 6. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 6 appear to be
in error as the 10 ms pulse has a higher derating factor than
the 10 ms pulse. However, when the derating factor for a
given pulse of Figure 6 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
TYPICAL PROTECTION CIRCUIT
Zin
Vin
LOAD
VL
V Vin (TRANSIENT)
VL
Vin
td
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
t
Figure 7.
OVERSHOOT DUE TO
V INDUCTIVE EFFECTS
Vin (TRANSIENT)
VL
Figure 8.
t
http://onsemi.com
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