DataSheet39.com

SUM90N08-6m2P PDF Datasheet - N-Channel 75-V (D-S) MOSFET - Vishay

Part Number SUM90N08-6m2P
Description N-Channel 75-V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 
Preview
Preview ( 6 pages )
		
SUM90N08-6m2P datasheet, circuit
SUM90N08-6m2P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
75 0.0062 at VGS = 10 V
ID (A)
90d
Qg (Typ)
75
FEATURES
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• 100 % Rg and UIS Tested
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• Industrial
TO-263
D
RoHS
COMPLIANT
G DS
Top View
Ordering Information: SUM90N08-6m2P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
75
± 20
90d
90d
240
50
125
272b
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69552
S-72505-Rev. A, 03-Dec-07
Symbol
RthJA
RthJC
Limit
40
0.55
Unit
°C/W
www.vishay.com
1

1 page

SUM90N08-6m2P pdf, schematic
SUM90N08-6m2P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 75 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 75 V, VGS = 0 V, TJ = 125 °C
VDS = 75 V, VGS = 0 V, TJ = 150 °C
On-State Drain Currenta
ID(on)
VDS 10 V, VGS = 10 V
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
Forward Transconductancea
Dynamicb
gfs VDS = 15 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 30 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 30 V, VGS = 10 V, ID = 50 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
Fall Timec
tr
td(off)
tf
VDD = 30 V, RL = 0.6 Ω
ID 50 A, VGEN = 10 V, Rg = 1 Ω
Source-Drain Diode Ratings and Characteristics TC = 25 °Cb
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD IF = 20 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 75 A, di/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
75
V
2.5 4.5
± 250
nA
1
50 µA
250
70 A
0.0051
0.0082
0.0062
0.0105
Ω
50 S
4620
517
247
75
25.5
20
1.2
16
11
24
10
115
2.4
30
20
40
20
pF
nC
Ω
ns
0.83
60
3.3
100
85
240
1.5
100
5
150
A
V
ns
A
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69552
S-72505-Rev. A, 03-Dec-07

2 Page

SUM90N08-6m2P equivalent
SUM90N08-6m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
160 1000
128
96 Package Limited
Limited by rDS(on)*
100
100 µs
64
32
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Maximum Drain Current vs. Case Temperature (SUM)
1
Duty Cycle = 0.5
10 1 ms
1
TC = 25 °C
Single Pulse
10 ms
100 ms
DC
0.1
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which rDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69552.
Document Number: 69552
S-72505-Rev. A, 03-Dec-07
www.vishay.com
5

5 Page





Information Total 6 Pages
Download[ SUM90N08-6m2P.PDF Datasheet ]

Share Link :

Electronic Components Distributor

SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Element14 Chip One Stop



Featured Datasheets

Part NumberDescriptionManufacturers
SUM90N08-6m2PThe function of this parts is a N-Channel 75-V (D-S) MOSFET.Vishay
Vishay

Quick jump to:

SUM9  1N4  2N2  2SA  2SC  74H  ADC  BC  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA 


DataSheet39.com is an Online Datasheet PDF Search Site.
It offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.



Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z  SCR

www.DataSheet39.com    |   2018   |  Contact Us   |  New  |  Search