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PDF SUM90N08-6m2P Data sheet ( Hoja de datos )
| Número de pieza | SUM90N08-6m2P | |
| Descripción | N-Channel 75-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SUM90N08-6m2P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
75 0.0062 at VGS = 10 V
ID (A)
90d
Qg (Typ)
75
FEATURES
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• 100 % Rg and UIS Tested
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• Industrial
TO-263
D
RoHS
COMPLIANT
G DS
Top View
Ordering Information: SUM90N08-6m2P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
75
± 20
90d
90d
240
50
125
272b
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69552
S-72505-Rev. A, 03-Dec-07
Symbol
RthJA
RthJC
Limit
40
0.55
Unit
°C/W
www.vishay.com
1
1 page  
SUM90N08-6m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
160 1000
128
96 Package Limited
Limited by rDS(on)*
100
100 µs
64
32
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Maximum Drain Current vs. Case Temperature (SUM)
1
Duty Cycle = 0.5
10 1 ms
1
TC = 25 °C
Single Pulse
10 ms
100 ms
DC
0.1
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS minimum VGS at which rDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69552.
Document Number: 69552
S-72505-Rev. A, 03-Dec-07
www.vishay.com
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