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SUM90N08-4m8P PDF Datasheet - Vishay

Part Number SUM90N08-4m8P
Description N-Channel 75-V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 
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SUM90N08-4m8P datasheet, circuit
SUM90N08-4m8P
Vishay Siliconix
N-Channel 75-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
0.0048 at VGS = 10 V
75
0.006 at VGS = 8 V
ID (A)
90d
90d
Qg (Typ)
105
TO-263
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
• 100 % UIS Tested
APPLICATIONS
• Power Supply
- Half-Bridge
- Secondary Synchronous Rectification
Industrial
D
RoHS
COMPLIANT
G DS
Top View
Ordering Information: SUM90N08-4m8P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Pulse Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
75
± 20
90d
90d
240
70
245
300b
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 74458
S-71663-Rev. C, 06-Aug-07
Symbol
RthJA
RthJC
Limit
40
0.5
Unit
°C/W
www.vishay.com
1

1 page
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SUM90N08-4m8P pdf, schematic
SUM90N08-4m8P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VDS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 75 V, VGS = 0 V
VDS = 75 V, VGS = 0 V, TJ = 125 °C
VDS = 75 V, VGS = 0 V, TJ = 150 °C
VDS 10 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
VGS = 8 V, ID = 20 A, TJ = 150 °C
VGS = 8 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 40 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 30 V, VGS = 10 V, ID = 85 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 30 V, RL = 0.4 Ω
ID 85 A, VGEN = 10 V, Rg = 1 Ω
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics
Continuous Current
IS
(TC = 25 °C)b
Pulsed Current
ISM
Forward Voltagea
VSD IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 75 A, di/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
75
V
24
± 250
nA
1
50 µA
250
70 A
0.004 0.0048
0.0096
0.0106
Ω
0.0046 0.006
58 S
6460
571
275
105
32
28
1.3
23
17
34
8
160
2.6
35
26
52
15
pF
nC
Ω
ns
0.85
68
2.6
88
85
240
1.5
100
4
132
A
V
ns
A
µC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74458
S-71663-Rev. C, 06-Aug-07

2 Page
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SUM90N08-4m8P equivalent
SUM90N08-4m8P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
180 1000
*Limited by rDS(on)
144 100 µs
100
108 Package Limited
72
36
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Maximum Drain Current vs. Case Temperature
1 ms
10
10 ms
100 ms
dc
1
0.1
0.1
*VGS
TC = 25 °C
Single Pulse
1 10 100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Single Pulse
10-3
10-2
Square Wave Pulse Duration (sec)
10-1
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74458.
Document Number: 74458
S-71663-Rev. C, 06-Aug-07
www.vishay.com
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