SUM90N06-4m4P
Vishay Siliconix
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
60 0.0044 at VGS = 10 V
ID (A)
90d
Qg (Typ)
105
TO-263
FEATURES
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• 100 % Rg and UIS Tested
APPLICATIONS
• Power Supply
- Secondary Synchronous Rectification
• Industrial
• OR-ing
D
RoHS
COMPLIANT
G DS
Top View
Ordering Information: SUM90N06-4m4P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 70 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
60
± 20
90d
90d
240
70
245
300b
3.75
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
Symbol
RthJA
RthJC
Limit
40
0.5
Unit
°C/W
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SUM90N06-4m4P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VDS = 0 V, ID = 250 µA
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
VDS = 60 V, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125 °C
VDS = 60 V, VGS = 0 V, TJ = 150 °C
On-State Drain Currenta
ID(on)
VDS ≥ 10 V, VGS = 10 V
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
Forward Transconductancea
Dynamicb
gfs VDS = 15 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 30 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 30 V, VGS = 10 V, ID = 85 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec
Turn-Off Delay Timec
Fall Timec
tr
td(off)
tf
Source-Drain Diode Ratings and Characteristics
VDD = 30 V, RL = 0.4 Ω
ID ≅ 85 A, VGEN = 10 V, Rg = 1 Ω
(TC = 25 °C)b
Continuous Current
IS
Pulsed Current
ISM
Forward Voltagea
VSD IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 75 A, di/dt = 100 A/µs
Reverse Recovery Charge
Qrr
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
60
V
2.5 4.5
± 250
nA
1
50 µA
250
70 A
0.0036
0.0059
0.0044
0.0077
Ω
60 S
6190
990
340
105
29
28
1.4
23
15
36
8
160
2.8
35
25
55
15
pF
nC
Ω
ns
0.84
61
3.0
91
85
240
1.5
100
4.5
140
A
V
ns
A
µC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74642
S-71691-Rev. A, 13-Aug-07
SUM90N06-4m4P
Vishay Siliconix
TYPICAL CHARACTERISTICS
100
25 °C, unless otherwise noted
1000
*Limited by rDS(on)
100
TJ = 150 °C
TJ = 25 °C
10
1
10-5
10-4
10-3
10-2
10-1
1
tAV (sec)
Single Pulse Avalanche Current Capability vs. Time
1
Duty Cycle = 0.5
10
1
TC = 25 °C
Single Pulse
1 ms
10 ms
100 ms
DC
0.1
0.1
*VGS
1 10 100
VDS - Drain-to-Source Voltage (V)
minimum VGS at which rDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74642.
Document Number: 74642
S-71691-Rev. A, 13-Aug-07
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