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SUM90N03-2M2P PDF Datasheet - Vishay

Part Number SUM90N03-2M2P
Description N-Channel 30-V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 
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SUM90N03-2M2P datasheet, circuit
New Product
SUM90N03-2m2P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
30 0.0022 at VGS = 10 V
0.0027 at VGS = 4.5 V
ID (A)a, e
90
90
Qg (Typ)
82 nC
TO-263
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• OR-ing
• Server
D
RoHS
COMPLIANT
G DS
Top View
Ordering Information: SUM90N03-2m2P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
90a, e
90e
33b, c
29.8b, c
200
36
64.8
90a, e
3.13b, c
250a
175
3.75b, c
2.63b, c
- 55 to 175
Unit
V
A
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb, d
t 10 s
RthJA
Maximum Junction-to-Case
Steady State
RthJC
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
Document Number: 74342
S-71948-Rev. B, 10-Sep-07
Typical
32
0.5
Maximum
40
0.6
Unit
°C/W
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SUM90N03-2M2P pdf, schematic
SUM90N03-2m2P
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
30
V
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
35
- 7.5
mV/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
1.5
2.5 V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
90
1
µA
10
A
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
rDS(on)
gfs
VGS = 10 V, ID = 32 A
VGS = 4.5 V, ID = 29 A
VDS = 15 V, ID = 32 A
0.0018
0.0022
160
0.0022
0.0027
Ω
S
Input Capacitance
Ciss
12065
Output Capacitance
Coss
VDS = 15 V, VGS = 0 V, f = 1 MHz
1725
pF
Reverse Transfer Capacitance
Crss
970
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg VDS = 15 V, VGS = 10 V, ID = 32 A
Qgs VDS = 15 V, VGS = 4.5 V, ID = 29 A
Qgd
171
81.5
34
29
257
123
nC
Gate Resistance
Rg f = 1 MHz
1.4 2.1
Ω
Turn-On Delay Time
td(on)
18 27
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 0.555 Ω
ID 27 A, VGEN = 10 V, Rg = 1 Ω
11 17
70 105
Fall Time
Turn-On Delay Time
tf
td(on)
10 15
ns
55 83
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 15 V, RL = 0.625 Ω
ID 24 A, VGEN = 4.5 V, Rg = 1 Ω
180 270
55 83
Fall Time
tf
12 18
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
TC = 25 °C
90
A
200
Body Diode Voltage
VSD IS = 22 A
0.8 1.2
V
Body Diode Reverse Recovery Time
trr
52 78 ns
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Qrr
ta
IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C
tb
70.2
27
25
105
nC
ns
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74342
S-71948-Rev. B, 10-Sep-07

2 Page
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SUM90N03-2M2P equivalent
New Product
SUM90N03-2m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
300 300
250 250
200 200
150
Package Limited
100
150
100
50 50
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Current Derating*
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74342
Document Number: 74342
S-71948-Rev. B, 10-Sep-07
www.vishay.com
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