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PDF SUM90N03-2M2P Data sheet ( Hoja de datos )
| Número de pieza | SUM90N03-2M2P | |
| Descripción | N-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
SUM90N03-2m2P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
30 0.0022 at VGS = 10 V
0.0027 at VGS = 4.5 V
ID (A)a, e
90
90
Qg (Typ)
82 nC
TO-263
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• OR-ing
• Server
D
RoHS
COMPLIANT
G DS
Top View
Ordering Information: SUM90N03-2m2P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
30
± 20
90a, e
90e
33b, c
29.8b, c
200
36
64.8
90a, e
3.13b, c
250a
175
3.75b, c
2.63b, c
- 55 to 175
Unit
V
A
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb, d
t ≤ 10 s
RthJA
Maximum Junction-to-Case
Steady State
RthJC
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 90 A.
Document Number: 74342
S-71948-Rev. B, 10-Sep-07
Typical
32
0.5
Maximum
40
0.6
Unit
°C/W
www.vishay.com
1
1 page  
New Product
SUM90N03-2m2P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
300 300
250 250
200 200
150
Package Limited
100
150
100
50 50
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Current Derating*
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74342
Document Number: 74342
S-71948-Rev. B, 10-Sep-07
www.vishay.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SUM90N03-2M2P.PDF ] | |
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