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SUM90N04-3m3P Datasheet PDF - Vishay

Part Number SUM90N04-3m3P
Description N-Channel 40-V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 

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SUM90N04-3m3P datasheet, circuit
www.vishay.com
SUM90N04-3m3P
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.0033 at VGS = 10 V
40
0.0041 at VGS = 4.5 V
ID (A) d
90
90
Qg (TYP.)
87
TO-263
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS tested
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
G
D
Top View
S
D
G
Ordering Information:
SUM90N04-3m3P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs)
TC = 25 °C
TC = 70 °C
Avalanche Current
Single Avalanche Energy a
L = 0.1 mH
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TA = 25 °C c
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
90 d
90 d
160
60
180
125 b
3.1
-55 to 150
S
N-Channel MOSFET
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) c
Junction-to-Case (Drain)
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
SYMBOL
RthJA
RthJC
LIMIT
40
1
UNIT
°C/W
S13-2462-Rev. B, 02-Dec-13
1
Document Number: 63397
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SUM90N04-3m3P equivalent
www.vishay.com
SUM90N04-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 1000
Limited by RDS(on)*
100
TJ = 25 °C
10
TJ = 150 °C
1
0.00001
0.0001
0.001
Time (s)
0.01
0.1
Single Pulse Avalanche Current Capability vs. Time
100 μs
10 1 ms
10 ms
100 ms, 1 s
1 10 s, DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63397.
S13-2462-Rev. B, 02-Dec-13
5
Document Number: 63397
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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