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SUM90N04-3m3P PDF Datasheet - N-Channel 40-V (D-S) MOSFET - Vishay

Part Number SUM90N04-3m3P
Description N-Channel 40-V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 
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SUM90N04-3m3P datasheet, circuit
www.vishay.com
SUM90N04-3m3P
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.0033 at VGS = 10 V
40
0.0041 at VGS = 4.5 V
ID (A) d
90
90
Qg (TYP.)
87
TO-263
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS tested
• Material categorization: For definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
G
D
Top View
S
D
G
Ordering Information:
SUM90N04-3m3P-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs)
TC = 25 °C
TC = 70 °C
Avalanche Current
Single Avalanche Energy a
L = 0.1 mH
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TA = 25 °C c
VDS
VGS
ID
IDM
IAS
EAS
PD
TJ, Tstg
LIMIT
40
± 20
90 d
90 d
160
60
180
125 b
3.1
-55 to 150
S
N-Channel MOSFET
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) c
Junction-to-Case (Drain)
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
SYMBOL
RthJA
RthJC
LIMIT
40
1
UNIT
°C/W
S13-2462-Rev. B, 02-Dec-13
1
Document Number: 63397
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page

SUM90N04-3m3P pdf, schematic
www.vishay.com
SUM90N04-3m3P
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 125 °C
VDS = 40 V, VGS = 0 V, TJ = 150 °C
VDS 10 V, VGS = 10 V
VGS = 10 V, ID = 22 A
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 20 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs VDS = 20 V, VGS = 10 V, ID = 20 A
Gate-Drain Charge c
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time c
td(on)
Rise Time c
Turn-Off Delay Time c
tr
td(off)
VDD = 20 V, RL = 2
ID 10 A, VGEN = 10 V, Rg = 1
Fall Time c
tf
Drain-Source Body Diode Ratings and Characteristics (TC = 25 °C) b
Continuous Current
IS
Pulsed Current
ISM
Forward Voltage a
VSD IF = 10 A, VGS = 0 V
Reverse Recovery Time
trr
Peak Reverse Recovery Current
IRM(REC)
IF = 10 A, dI/dt = 100 A/μs
Reverse Recovery Charge
Qrr
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
TYP.
MAX.
UNIT
40 -
-
V
1 - 2.5
-
-
± 250
nA
- -1
- - 50 μA
- - 250
50 - - A
- 0.0027 0.0033
- 0.0034 0.0041
- 169 -
S
- 5286 -
- 705 -
- 283 -
- 87 131
- 15.3 -
- 12.2 -
0.5 2.7 5.4
- 11 20
- 7 14
- 45 68
- 7 14
- - 90
- - 160
- 0.72 1.2
- 42 63
- 2.5 3.8
- 52 78
pF
nC
ns
A
V
ns
A
nC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2462-Rev. B, 02-Dec-13
2
Document Number: 63397
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

2 Page

SUM90N04-3m3P equivalent
www.vishay.com
SUM90N04-3m3P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 1000
Limited by RDS(on)*
100
TJ = 25 °C
10
TJ = 150 °C
1
0.00001
0.0001
0.001
Time (s)
0.01
0.1
Single Pulse Avalanche Current Capability vs. Time
100 μs
10 1 ms
10 ms
100 ms, 1 s
1 10 s, DC
0.1
TA = 25 °C
Single Pulse
BVDSS Limited
0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63397.
S13-2462-Rev. B, 02-Dec-13
5
Document Number: 63397
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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