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SUM120N04-1m7L PDF Datasheet - Vishay

Part Number SUM120N04-1m7L
Description N-Channel 40-V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 
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SUM120N04-1m7L datasheet, circuit
www.vishay.com
SUM120N04-1m7L
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
40
RDS(on) (Ω) MAX.
0.0017 at VGS = 10 V
0.0020 at VGS = 4.5 V
ID (A) d
120
120
Qg (TYP.)
190
TO-263
Top View
S
D
G
Ordering Information:
SUM120N04-1m7L-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
• Motor drive switch
G
D
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 70 °C
VGS
ID
Pulsed Drain Current (t = 100 μs)
Avalanche Current
Single Avalanche Energy a
L = 0.1 mH
IDM
IAS
EAS
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
TC = 25 °C
TC = 25 °C c
PD
TJ, Tstg
LIMIT
40
± 20
120 d
120 d
480
92
423
375 b
125 b
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) c
Junction-to-Case (Drain)
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
d. Package limited.
SYMBOL
RthJA
RthJC
LIMIT
40
0.4
UNIT
°C/W
S14-0763-Rev. B, 14-Apr-14
1
Document Number: 62920
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page
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SUM120N04-1m7L pdf, schematic
www.vishay.com
SUM120N04-1m7L
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
Drain-Source On-State Resistance a
Forward Transconductance a
Dynamic b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 125 °C
VDS = 40 V, VGS = 0 V, TJ = 175 °C
VDS 10 V, VGS = 10 V
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 20 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge c
Qg
Gate-Source Charge c
Qgs VDS = 20 V, VGS = 10 V, ID = 20 A
Gate-Drain Charge c
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time c
td(on)
Rise Time c
Turn-Off Delay Time c
tr
td(off)
VDD = 20 V, RL = 2 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
Fall Time c
tf
Drain-Source Body Diode Ratings and Characteristics b (TC = 25 °C)
Pulsed Current
ISM
Forward Voltage a
VSD IF = 10 A, VGS = 0 V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
MIN.
TYP.
MAX.
UNIT
40 -
-
V
1.5 - 2.5
-
-
± 250
nA
- -1
μA
- - 150
- - 5 mA
120 - - A
- 0.0014 0.0017
Ω
- 0.0015 0.0020
- 212 -
S
- 11 685 -
- 1652 -
- 733 -
- 190 285
- 29 -
- 27 -
0.2 1.07 2.14
- 15 23
- 10 20
- 74 111
- 12 20
pF
nC
Ω
ns
- - 480 A
- 0.8 1.5 V
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S14-0763-Rev. B, 14-Apr-14
2
Document Number: 62920
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

2 Page
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SUM120N04-1m7L equivalent
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
SUM120N04-1m7L
Vishay Siliconix
0.1
0.01
0.001
0.0001
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1 Duty Cycle = 0.5
100
0.2
0.1 0.1
0.05
0.02
Single Pulse
1000
0.01
10-4
10-3
10-2
Square Wave Pulse Duration (s)
10-1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?62920.
S14-0763-Rev. B, 14-Apr-14
5
Document Number: 62920
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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