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PDF SUM110N04-2m1P Data sheet ( Hoja de datos )
| Número de pieza | SUM110N04-2m1P | |
| Descripción | N-Channel 40-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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New Product
SUM110N04-2m1P
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.0021 at VGS = 10 V
0.0024 at VGS = 4.5 V
ID (A)a, c
110
110
Qg (Typ.)
240 nC
TO-263
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• Synchronous Rectification
• Power Supplies
D
RoHS
COMPLIANT
G
G DS
Top View
Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
40
± 20
110a, c
110c
29b
23b
250
80
320
110a, c
2.6b
312a
200
3.13b
2.0b
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb
Steady State
RthJA
Maximum Junction-to-Case
Steady State
RthJC
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. Calculated based on maximum junction temperature. Package limitation current is 110 A.
Typical
32
0.33
Maximum
40
0.4
Unit
V
A
V
A
W
°C
Unit
°C/W
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
www.vishay.com
1
1 page  
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
350
280
210
140 Package Limited
70
0
0 25 50 75 100 125 150
TJ - Junction to Case (°C)
Current Derating*
400
350
300
250
200
150
100
50
0
0
SUM110N04-2m1P
Vishay Siliconix
25 50 75 100 125
TJ - Junction to Case (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69983.
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
www.vishay.com
5
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| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SUM110N04-2m1P.PDF ] | |
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