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SUM110N04-2m1P PDF Datasheet - N-Channel 40-V (D-S) MOSFET - Vishay

Part Number SUM110N04-2m1P
Description N-Channel 40-V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 
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SUM110N04-2m1P datasheet, circuit
New Product
SUM110N04-2m1P
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.0021 at VGS = 10 V
0.0024 at VGS = 4.5 V
ID (A)a, c
110
110
Qg (Typ.)
240 nC
TO-263
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• Synchronous Rectification
• Power Supplies
D
RoHS
COMPLIANT
G
G DS
Top View
Ordering Information: SUM110N04-2m1P-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
40
± 20
110a, c
110c
29b
23b
250
80
320
110a, c
2.6b
312a
200
3.13b
2.0b
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb
Steady State
RthJA
Maximum Junction-to-Case
Steady State
RthJC
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. Calculated based on maximum junction temperature. Package limitation current is 110 A.
Typical
32
0.33
Maximum
40
0.4
Unit
V
A
V
A
W
°C
Unit
°C/W
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
www.vishay.com
1

1 page

SUM110N04-2m1P pdf, schematic
SUM110N04-2m1P
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 40 V, VGS = 0 V
VDS = 40 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
RDS(on)
gfs
VGS = 10 V, ID = 30 A
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 20 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 20 V, VGS = 10 V, ID = 20 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 20 V, RL = 1.0 Ω
ID 20 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 20 V, RL = 1.0 Ω
ID 20 A, VGEN = 4.5 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
TC = 25 °C
Body Diode Voltage
VSD IS = 20 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
40
1.2
120
Typ. Max. Unit
41
-8
0.0017
0.002
180
2.5
± 100
1
10
0.0021
0.0024
V
mV/°C
V
nA
µA
A
Ω
S
18800
1550
850
240
40
22
0.85
20
11
77
10
102
62
180
60
360
1.3
30
17
115
15
155
95
270
90
pF
nC
Ω
ns
110
A
200
0.8 1.2
V
50 75 ns
70 105 nC
30
ns
20
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69983
S-80680-Rev. A, 31-Mar-08

2 Page

SUM110N04-2m1P equivalent
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
350
280
210
140 Package Limited
70
0
0 25 50 75 100 125 150
TJ - Junction to Case (°C)
Current Derating*
400
350
300
250
200
150
100
50
0
0
SUM110N04-2m1P
Vishay Siliconix
25 50 75 100 125
TJ - Junction to Case (°C)
Power Derating
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69983.
Document Number: 69983
S-80680-Rev. A, 31-Mar-08
www.vishay.com
5

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