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SIS890DN Datasheet PDF - Vishay

Part Number SIS890DN
Description N-Channel 100-V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 

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SIS890DN datasheet, circuit
N-Channel 100 V (D-S) MOSFET
SiS890DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
100
RDS(on) () (Max.)
0.0235 at VGS = 10 V
0.0245 at VGS = 7.5 V
0.0315 at VGS = 4.5 V
ID (A)f
30g
30g
28.5
Qg (Typ.)
9.5 nC
PowerPAK® 1212-8
3.30 mm
S
1S
3.30 mm
2
S
3G
4
D
8D
7
D
6
D
5
Bottom View
Ordering Information:
SiS890DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Capable of Operating with 5 V Gate Drive
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Telecom Bricks
• Primary side switch
• Synchronous Rectification
• Industrial
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
Pulsed Drain Current (t = 300 µs)
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)c, d
TJ, Tstg
Limit
100
± 20
30g
26.5
8.8a, b
7.1a, b
60
30g
3.1a, b
10
5
52
33
3.7a, b
2.4a, b
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta, e
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
26
1.9
33
°C/W
2.4
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 10 s.
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
e. Maximum under steady state conditions is 81 °C/W.
f. Based on TC = 25 °C.
g. Package limited.
Document Number: 63867
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-0973-Rev. A, 30-Apr-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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SIS890DN equivalent
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
SiS890DN
Vishay Siliconix
32
Package Limited
24
16
8
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
65 2.0
52 1.6
39 1.2
26 0.8
13 0.4
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0.0
0
25 50 75 100 125
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
150
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 63867
For technical questions, contact: pmostechsupport@vishay.com
www.vishay.com
S12-0973-Rev. A, 30-Apr-12
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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Information Total 13 Pages
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