DataSheet39.com

SIR882DP Datasheet PDF - Vishay

Part Number SIR882DP
Description N-Channel 100-V (D-S) MOSFET
Manufacturers Vishay 
Logo Vishay Logo 

Preview ( 13 pages )
		
SIR882DP datasheet, circuit
New Product
N-Channel 100 V (D-S) MOSFET
SiR882DP
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.0087 at VGS = 10 V
100 0.0094 at VGS = 7.5 V
0.0115 at VGS = 4.5 V
PowerPAK® SO-8
ID (A)a
60
60
60
Qg (Typ.)
18.3 nC
6.15 mm
D
8D
7
D
6
D
5
S
1S
5.15 mm
2
S
3G
4
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Primary Side Switch
• Telecom/Server 48 V, Full/Half-Bridge dc-to-dc
• Industrial
D
G
Bottom View
Ordering Information: SiR882DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L =0.1 mH
IAS
EAS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
TA = 70 °C
TJ, Tstg
Limit
100
± 20
60a
55
17.6b, c
13.9b, c
80
60a
4.9b, c
30
45
83
53
5.4b, c
3.4b, c
- 55 to 150
260
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t 10 s
Steady State
RthJA
RthJC
18
1.0
23 °C/W
1.5
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 65 °C/W.
Document Number: 65932
S10-2681-Rev. B, 22-Nov-10
www.vishay.com
1

No Preview Available !


1 page
line_dark_gray
SIR882DP equivalent
New Product
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
80
SiR882DP
Vishay Siliconix
64
Package Limited
48
32
16
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Current Derating*
100 2.5
80 2.0
60 1.5
40 1.0
20 0.5
0
0 25 50 75 100 125 150
TC - Case Temperature (°C)
Power, Junction-to-Case
0
0 25 50 75 100 125 150
TA - Ambient Temperature (°C)
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65932
S10-2681-Rev. B, 22-Nov-10
www.vishay.com
5

5 Page
line_dark_gray


Information Total 13 Pages
Download[ SIR882DP.PDF Datasheet ]

Share Link :

Electronic Components Distributor

SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Element14 Chip One Stop



Featured Datasheets

Part NumberDescriptionManufacturers
SIR882DPThe function is N-Channel 100-V (D-S) MOSFET.Vishay
Vishay

Quick jump to:

SIR8  1N4  2N2  2SA  2SC  74H  ADC  BC  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA 


DataSheet39.com is an Online Datasheet PDF Search Site.
It offers a large amount of data sheet, You can free PDF files download.
The updated every day, always provide the best quality and speed.



keyword : SIR882DP schematic, SIR882DP equivalent, SIR882DP pinout

DataSheet39.com   |  2018   |  Privacy Policy |  Contact Us  | New  |  Search