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PDF TLE4976-1K Data sheet ( Hoja de datos )

Número de pieza TLE4976-1K
Descripción High Precision Hall Effect Switch
Fabricantes Infineon 
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No Preview Available ! TLE4976-1K Hoja de datos, Descripción, Manual

February 2009
TLE4976-1K / TLE4976L
High Precision Hall Effect Switch with Current Interface
Data Sheet
Rev. 2.0
Sense & Control

1 page




TLE4976-1K pdf
High Precision Hall Effect Switch with Current
Interface
TLE4976-1K
TLE4976L
1 Product Description
1.1 Overview
The TLE4976-1K and TLE4976L are high precision unipolar Hall switches
with a two wire, 6mA/14mA current interface in a SMD or leaded package.
A chopped measurement principle provides high stability switching
thresholds for operating temperatures between -40°C and 150°C.
1.2 Features
• 3.0V to 24V supply voltage operation
• High sensitivity and high stability of the magnetic switching points
• High resistance to mechanical stress by Active Error Compensation
• Reverse battery protection (-18V)
• Superior temperature stability
• Peak temperatures up to 195°C without damage
• Low jitter (typ. 1µs)
• High ESD performance (± 8kV HBM)
• Digital output signal with current modulation 6mA / 14mA
• Unipolar version
• SMD package SC59 (SOT23 compatible): TLE4976-1K
• Leaded package PG-SSO-3-2: TLE4976L
1.3 Target Applications
The sensor targets all applications where a high precision unipolar magnetic switch is required (e.g. position
sensing). Due to the current interface the number of wires required in the application is minimized thus saving
costs and increasing reliability. This is specially helpful in all applications where the microcontroller is not on the
same PCB as the Hall switch but in some distance.
Product Name
TLE4976-1K
TLE4976L
Data Sheet
Product Type
Hall Effect Switch
Hall Effect Switch
Ordering Code
3
Package
SC59
PG-SSO-3-2
Rev. 2.0, 2009-02-12

5 Page





TLE4976-1K arduino
3.2 Absolute Maximum Ratings
TLE4976-1K
TLE4976L
Specification
Table 3 Absolute Maximum Rating Parameters
Parameter
Symbol
Limit Values Unit
Min.
Max.
Supply voltage
VS
– 18
18
V
– 18
24
– 18
26
Supply current through
protection device
IS
– 50
+50
mA
Junction temperature
Tj
– 155 °C
– 165
– 175
– 195
Storage temperature
Magnetic flux density
TS
B
– 40
150
°C
– unlimited mT
Note / Test Condition
for 1h, RS+RL > 75
for 5min, RS+RL > 75
for 2000h (not additive)
for 1000h (not additive)
for 168h (not additive)
for 3 x 1h (additive)
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Table 4 ESD Protection1)
Parameter
Symbol
Limit Values Unit Note / Test Condition
Min.
Max.
ESD Voltage
VESD
±8
HBM, R = 1.5k,
C = 100pF
TA = 25°C
1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method
3015.7
3.3 Operating Range
The following operating conditions must not be exceeded in order to ensure correct operation of the Hall Effect
Switch.
All parameters specified in the following sections refer to these operating conditions unless otherwise mentioned.
Table 5 Operating Conditions Parameters
Parameter
Symbol
Min.
Supply voltage
VS 3
3
Junction temperature
Tj
- 40
Values
Typ. Max.
18
24
150
175
Unit
V
Note / Test Condition
for 5 min, RS+RL > 100
for 168h
Data Sheet
9 Rev. 2.0, 2009-02-12

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