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Número de pieza | CED95P04 | |
Descripción | P-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | CET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CED95P04 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CED95P04/CEU95P04
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-40V, -77A, RDS(ON) =8.6mΩ @VGS = -10V.
RDS(ON) =12mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
Drain Current-Pulsed a
@ TC = 100 C
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS -40
VGS ±20
-77
ID -48
IDM -308
73.5
PD 0.59
EAS
IAS
TJ,Tstg
320
80
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.7
62.5
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2013.July
http://www.cetsemi.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CED95P04.PDF ] |
Número de pieza | Descripción | Fabricantes |
CED95P04 | P-Channel Enhancement Mode Field Effect Transistor | CET |
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