22NM60N Datasheet PDF - STMicroelectronics
| Part Number | 22NM60N | |
| Description | N-channel Power MOSFET | |
| Manufacturers | STMicroelectronics | |
| Logo |  |
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STB22NM60N, STF22NM60N, STI22NM60N
STP22NM60N, STW22NM60N
N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET
in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247
Features
Order codes
STB22NM60N
STF22NM60N
STI22NM60N
STP22NM60N
STW22NM60N
VDSS
(@Tjmax)
650 V
650 V
650 V
650 V
650 V
RDS(on)
max.
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
< 0.22 Ω
ID
16 A
16 A
16 A
16 A
16 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
Switching applications
Description
These devices are made using the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
TO-247
3
2
1
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STB22NM60N
STF22NM60N
STI22NM60N
STP22NM60N
STW22NM60N
Marking
22NM60N
Package
D²PAK
TO-220FP
I²PAK
TO-220
TO-247
!-V
Packaging
Tape and reel
Tube
January 2011
Doc ID 15853 Rev 4
1/23
www.st.com
23
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| |
 
STB/F/I/P/W22NM60N
Table 7. Switching times
Symbol
Parameter
td(on)
tr(v)
td(off)
tf(i)
Turn-on delay time
Voltage rise time
Turn-off delay time
Fall time
Electrical characteristics
Test conditions
VDD = 300 V, ID = 8 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
Min. Typ. Max Unit
11
18
-
74
38
ns
ns
-
ns
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 16 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 16 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 19)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 16 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
16 A
-
64 A
- 1.6 V
296
-4
26.8
ns
µC
A
350
- 4.7
27
ns
µC
A
Doc ID 15853 Rev 4
5/23
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 22NM60N electronic component. |
| Information | Total 23 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ 22NM60N.PDF Datasheet ] | |
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