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PDF NXPS20S100C Data sheet ( Hoja de datos )
| Número de pieza | NXPS20S100C | |
| Descripción | Dual power Schottky diode | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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NXPS20S100C
Dual power Schottky diode
30 January 2013
Product data sheet
1. General description
Dual common cathode power Schottky diode designed for high frequency switched mode
power supplies in a SOT78 (TO-220AB) plastic package.
2. Features and benefits
• High junction temperature capability
• Low leakage current
• Negligible switching losses
• Optimised design to give low VF and high Tj(max)
3. Applications
• DC to DC converters
• Freewheeling diode
• OR-ing diode
• Switched mode power supply rectifier
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5 ; Tmb ≤ 157 °C; square-wave
pulse; per diode; Fig. 1; Fig. 2; Fig. 3
IO(AV)
average output current δ = 0.5 ; square-wave pulse; both
diodes conducting
Tj junction temperature
Static characteristics
VF
forward voltage
IF = 3 A; Tj = 125 °C; Fig. 6
IR
reverse current
VR = 100 V; Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 100 V
- - 10 A
- - 20 A
- - 175 °C
- 0.53 0.58 V
- - 3 µA
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1 page  
NXP Semiconductors
20
IF
(A)
16
003aak788
12
(1) (2) (3)
8
4
0
0 0.2 0.4 0.6 0.8 1
VF (V)
Fig. 6. Forward current as a function of forward
voltage; per diode
NXPS20S100C
Dual power Schottky diode
104
IR
(uA)
103
102
003aak789
(4)
(3)
(2)
10
1
10-1
(1)
10-2
0
20 40 60 80 100
VR (V)
Fig. 7. Reverse leakage current as a function of
reverse voltage; per diode; typical values
103
Cd
(pF)
102
003aak790
10
1
10 102
VR (V)
Fig. 8. Diode junction capacitance as a function of applied reverse voltage; per diode; typical values
NXPS20S100C
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 January 2013
© NXP B.V. 2013. All rights reserved
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