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What is DMN6040SVTQ?

This electronic component, produced by the manufacturer "Diodes", performs the same function as "N-CHANNEL ENHANCEMENT MODE MOSFET".


DMN6040SVTQ Datasheet PDF - Diodes

Part Number DMN6040SVTQ
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturers Diodes 
Logo Diodes Logo 


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DMN6040SVTQ
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(ON) Max
44m@ VGS = 10V
60m@ VGS = 4.5V
ID
TA = +25°C
5.0A
4.3A
Description and Applications
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
DC-DC Converters
Power Management Functions
Backlighting
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test in Production
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)
TSOT26
Top View
D1
D2
G3
6D
5D
4S
Top View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMN6040SVTQ-7
DMN6040SVTQ-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
32D
32D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
Feb
2
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
2017
E
Mar
3
2018
F
2019
G
2020
H
2021
I
2022
J
Apr May Jun
456
Jul Aug Sep
78
9
1 of 8
www.diodes.com
2023
K
Oct
O
2024
L
Nov
N
2025
M
Dec
D
December 2015
© Diodes Incorporated

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DMN6040SVTQ equivalent
DMN6040SVTQ
20 20
VDS = 5.0V
16 16
12 12
8
4
0
0 0.5 1.0 1.5 2.0 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
0.10
0.09
0.08
0.07
0.06
0.05
0.04
VGS = 4.5V
0.03
0.02
VGS = 10V
0.01
0
0
4 8 12 16
ID, DRAIN-SOURCE CURRENT
Fig. 6 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.10
0.09
0.08
VGS = 4.5V
TA = 150°C
0.07
0.06
TA = 125°C
0.05
0.04
0.03
TA = 85°C
TA = 25°C
0.02
0.01
0
0
TA = -55°C
4 8 12 16
ID, DRAIN CURRENT
Fig. 8 Typical On-Resistance vs.
Drain Current and Temperature
3.0
20
20
8
4
0
0
0.10
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
TA = -55°C
1234
VGS, GATE-SOURCE VOLTAGE
Fig. 5 Typical Transfer Characteristics
5
0.08
0.06
0.04
ID = 3.5A
ID = 4.5A
0.02
0
0 1 2 3 4 5 6 7 8 9 10
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 7 Typical On-Resistance vs.
Drain Current and Gate Voltage
2.4
2.2
2.0 VGS = 10V
ID = 10A
1.8
1.6
1.4 VGS = 4.5V
1.2 ID = 5A
1.0
0.8
0.6
0.4
0.2
0
50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Fig. 9 On-Resistance Variation with Temperature
DMN6040SVTQ
Document number: DS38508 Rev. 1 - 2
5 of 8
www.diodes.com
December 2015
© Diodes Incorporated


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Featured Datasheets

Part NumberDescriptionMFRS
DMN6040SVTThe function is N-CHANNEL ENHANCEMENT MODE MOSFET. DiodesDiodes
DMN6040SVTQThe function is N-CHANNEL ENHANCEMENT MODE MOSFET. DiodesDiodes

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