|
|
Número de pieza | IRG4IBC30SPBF | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRG4IBC30SPBF (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! PD - 95637A
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Standard: Optimized for minimum saturation
voltage and low operating freqencies (<1 kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• Industry standard TO-220 Full-Pak
• Lead-Free
IRG4IBC30SPbF
C
G
E
N-channel
VCES = 600V
VCE(on) typ. = 1.4V
@VGE = 15V, IC = 18A
Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• Designed to be a "drop-in" replacement for equivalent
industry -standard Generation 3 IR IGBTs
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Wt
Parameter
Junction-to-Case
Junction-to-Ambient, typical socket mount
Weight
www.irf.com
TO-220 Full-Pak
Max.
600
23.5
13.0
47
47
± 20
10
45
18
-55 to + 150
300 (0.063 in. (1.6mm) from case)
Units
V
A
V
mJ
W
°C
Typ.
–––
–––
2.1 (0.075)
Max.
2.8
65
–––
Units
°C/W
g (oz)
1
06/17/2010
1 page 2000
1500
1000
VCGiesE
=
=
0V,
Cge
+
f = 1MHz
Cgc , Cce
SHORTED
CCroeess
=
=
CCgcec
+
Cgc
Cies
500
0
1
Coes
Cres
10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4IBC30SPbF
20 VCC = 400V
I C = 18A
16
12
8
4
0
0 10 20 30 40 50 60
QG , Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.80 VCC = 480V
VGE
TJ
=
=
15V
25 °
C
3.76 IC = 18A
3.72
3.68
3.64
100 RG = 23OΩhm
VGE = 15V
VCC = 480V
10
1
IC = 36A
IC = 18A
IC = 9.90AA
10
3.60
0
10 20 30 40 50
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
RGRG,, GaatteeRReseisstiasntacenc(Ωe)(Ohm)
TJ, Junction Temperature ( °C )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet IRG4IBC30SPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRG4IBC30SPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |