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PDF AUIRFP2907 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFP2907 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
PD -97692A
AUIRFP2907
Features
l Advanced Planar Technology
l Low On-Resistance
l Dynamic dV/dT Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Repetitive Avalanche Allowed
up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified*
G
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET® Power MOSFETs
utilizes the latest processing techniques to achieve
low on-resistance per silicon area. This benefit
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely
efficient and reliable device for use in Automotive and
a wide variety of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
RDS(on) typ.
max
ID (Silicon Limited)
S ID (Package Limited)
75V
3.6mΩ
4.5mΩ
h209A
90A
G
Gate
D
S
D
G
TO-247AC
AUIRFP2907
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
209h
148h
Units
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
cIDM Pulsed Drain Current
90
840
PD @TC = 25°C Power Dissipation
Linear Derating Factor
470 W
3.1 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited)
cAvalanche Current
cRepetitive Avalanche Energy
ePeak Diode Recovery dv/dt
± 20
1970
See Fig. 12a, 12b, 15, 16
5.0
V
mJ
A
mJ
V/ns
TJ Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
y y300
10 lbf in (1.1N m)
°C
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
Typ.
–––
Max.
0.32
Units
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
––– °C/W
RθJA Junction-to-Ambient
––– 40
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/11/11
1 page  
AUIRFP2907
20000
16000
12000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
8000
4000
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
100
20 ID = 125A
16
VVDDSS
=
=
60V
37V
12
8
4
FOR TEST CIRCUIT
0 SEE FIGURE 13
0 100 200 300 400 500 600 700
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100 TJ = 175° C
10
TJ = 25° C
1
0.1
0.0
VGS = 0 V
0.5 1.0 1.5 2.0 2.5
VSD ,Source-to-Drain Voltage (V)
3.0
10000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
100μsec
10 1msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
10msec
DC
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1000
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
Fig 8. Maximum Safe Operating Area
5
5 Page 
AUIRFP2907
Ordering Information
Base part
number
Package Type
AUIRFP2907
TO-247
Standard Pack
Form
Tube
Complete Part Number
Quantity
25
AUIRFP2907
www.irf.com
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet AUIRFP2907.PDF ] | |
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