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PDF AUIRFP2602 Data sheet ( Hoja de datos )
| Número de pieza | AUIRFP2602 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
Features
l Advanced Process Technology
l Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features combine
to make this design an extremely efficient and
reliable device for use in Automotive applications
and a wide variety of other applications.
G
G
G a te
PD - 96420
AUIRFP2602
HEXFET® Power MOSFET
D
S
D
V(BR)DSS
24V
RDS(on) typ. 1.25mΩ
max. 1.6mΩ
jID (Silicon Limited) 380A
ID (Package Limited) 180A
S
GD
TO-247AD
D
D rain
S
S o u rc e
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
VGS
EAS
EAS (Tested )
IAR
EAR
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Max.
j380
j270
180
1580
380
2.5
± 20
400
1011
See Fig.17a, 17b, 14, 15
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Parameter
iRθJC
Junction-to-Case
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
iJunction-to-Ambient (PCB Mount, steady state)
Typ.
–––
0.24
–––
Max.
0.40
–––
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/17/11
1 page  
100000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
Coss
Crss
12.0
10.0
ID= 180A
8.0
6.0
4.0
AUIRFP2602
VDS= 19V
VDS= 12V
2.0
1000
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
0.0
0
50 100 150 200 250 300
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
10000
400
OPERATION IN THIS AREA
LIMITED BY R DS(on)
350 Limited By Package
1000
100μsec
300
1msec
250
100 200
10msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
DC
10
VDS, Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
100
150
100
50
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 10. Maximum Drain Current vs. Case Temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
τCτ
Ri (°C/W)
0.0224
0.0641
τi (sec)
0.00002
0.000095
τ3 τ3
τ4 τ4
0.1778 0.00169
0.1362 0.013883
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet AUIRFP2602.PDF ] | |
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