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PDF AUIRFL024N Data sheet ( Hoja de datos )
| Número de pieza | AUIRFL024N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
AUIRFL024N
Features
• Advanced Planar Technology
• Low On-Resistance
• Dynamic dV/dT Rating
• 150°C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free, RoHS Compliant
• Automotive Qualified*
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide
variety of other applications.
HEXFET® Power MOSFET
D V(BR)DSS
55V
G RDS(on) max. 75mΩ
S ID
2.8A
G
Gate
D
S
D
G
SOT-223
AUIRFL024N
D
Drain
S
Source
Base part number
AUIRFL024N
Package Type
SOT-223
Standard Pack
Form
Quantity
Tube
95
Tape and Reel
2500
Orderable Part Number
AUIRFL024N
AUIRFL024NTR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 25°C
hContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
hPower Dissipation (PCB Mount)
gPower Dissipation (PCB Mount)
gLinear Derating Factor (PCB Mount)
4.0
2.8
2.3
11.2
2.1
1.0
8.3
A
W
mW/°C
VGS Gate-to-Source Voltage
± 20
V
dEAS Single Pulse Avalanche Energy (Thermally Limited)
214
mJ
ÃIAR Avalanche Current
2.8 A
gEAR Repetitive Avalanche Energy
0.1 mJ
dv/dt
ePeak Diode Recovery dv/dt
5.0 V/ns
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
-55 to + 150
°C
Parameter
Typ.
Max.
Units
gRθJA Junction-to-Ambient (PCB mount, steady state)
90
hRθJA Junction-to-Ambient (PCB mount, steady state)
50
120 °C/W
60
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 26, 2014
1 page  
AUIRFL024N
10V
QGS
VG
QG
QGD
Charge
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2μF
.3μF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+
-
VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1000
100
D = 0.50
0.20
0.10
10
0.05
0.02
0.01
1
0.1
0.0001
SINGLE PULSE
(THERMAL RESPONSE)
0.001
0.01
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.1 1 10
t1, Rectangular Pulse Duration (sec)
100
1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 26, 2014
5 Page 
AUIRFL024N
Revision History
Date
3/26/2014
Comments
• Updated part marking on page 7
• Updated data sheet with new IR corporate template
11
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 26, 2014
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet AUIRFL024N.PDF ] | |
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