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PDF AUIRF8739L2TR Data sheet ( Hoja de datos )
| Número de pieza | AUIRF8739L2TR | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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AUTOMOTIVE GRADE
AUIRF8739L2TR
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Lead Free, RoHS Compliant and Halogen Free
Automotive Qualified *
Automotive DirectFET® Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
ID (Silicon Limited)
Qg
40V
0.35m
0.6m
545A
375nC
DG
S
S
S
S
S
S
SD
S
Applicable DirectFET® Outline and Substrate Outline
L8 DirectFET2 L-can
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF8739L2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging
technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or
convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET®
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging
platform coupled with the latest silicon technology allows the AUIRF8739L2 to offer substantial system level savings and performance improvement
specifically in motor drive, DC-DC and other heavy load applications on ICE, HEV and EV platforms. This MOSFET utilizes the latest processing
techniques to achieve ultra low on-resistance per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high
repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current
automotive applications.
Base Part Number
AUIRF8739L2
Package Type
DirectFET®
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
AUIRF8739L2TR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VGS Gate-to-Source Voltage
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package limit)
IDM Pulsed Drain Current
PD @TC = 25°C
Power Dissipation
PD @TA = 25°C
Power Dissipation
EAS Single Pulse Avalanche Energy (Thermally Limited)
EAS (Tested)
Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
*Qualification standards can be found at http://www.irf.com/
Max.
40
545
385
57
375
1150
340
3.8
312
1500**
See Fig. 14, 15, 22a, 22b
Units
V
A
W
mJ
A
270
-55 to + 175
mJ
°C
1 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
February 17, 2015
1 page  
4.5
4.0
3.5
3.0 ID = 250µA
ID = 1.0mA
2.5 ID = 1.0A
2.0
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
500
400 TJ = 25°C
300 TJ = 175°C
200
100
0
0
VDS = 10V
380µs PULSE WIDTH
40 80 120 160
ID, Drain-to-Source Current (A)
200
Fig 9. Typical Forward Transconductance vs. Drain Current
16
ID= 195A
12
VDS= 32V
VDS= 20V
8
4
0
0 100 200 300 400 500
QG Total Gate Charge (nC)
AUIRF8739L2TR
10000
1000
100
10
TJ = 175°C
TJ = 25°C
1
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
1.4
Fig 8. Typical Source-Drain Diode Forward Voltage
100000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORT ED
Crss = Cgd
Coss = Cds + Cgd
Ciss
10000
Coss
Crss
1000
0.1
1 10
VDS, Drain-to-Source Voltage (V)
100
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
600
LIMITED BY PACKAGE
500
400
300
200
100
0
25
50 75 100 125 150
TC, Case Temperature (°C)
175
Fig 11. Typical Gate Charge vs.
5 www.irf.com © 2015 International Rectifier
Fig 12. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
February 17, 2015
5 Page 
AUIRF8739L2TR
Qualification Information†
Qualification Level
Moisture Sensitivity Level
Machine Model
ESD
Human Body Model
RoHS Compliant
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
DirectFET2 L-CAN
MSL1
Class M4 (+/- 800V)††
AEC-Q101-002
Class H2 (+/- 4000V)††
AEC-Q101-001
Yes
† Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage.
Click on this section to link to the appropriate technical
paper.
Click on this section to link to the DirectFET® Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain)
of part.
Repetitive rating; pulse width limited by max. junction
temperature.
Starting TJ = 25°C, L = 0.016mH, RG = 50, IAS = 195A,
Vgs = 20V.
Pulse width 400µs; duty cycle 2%.
Used double sided cooling, mounting pad with large
heatsink.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
R is measured at TJ of approximately 90°C.
** Starting TJ = 25°C, L = 0.1mH, RG = 50, IAS = 288A,
Vgs = 20V
11 www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
February 17, 2015
11 Page | ||
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