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PDF BYV10ED-600P Data sheet ( Hoja de datos )
| Número de pieza | BYV10ED-600P | |
| Descripción | Ultrafast power diode | |
| Fabricantes | NXP Semiconductors | |
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BYV10ED-600P
Ultrafast power diode
24 July 2015
Product data sheet
1. General description
Enhanced ultrafast power diode in a SOT428 (DPAK) plastic package.
2. Features and benefits
• High thermal cycling performance
• Soft recovery characteristic
• Low on-state losses
• Surface-mountable package
• Low thermal resistance
• Enhanced avalanche energy capability
3. Applications
• Dual Mode (DCM and CCM) PFC
• Power Factor Correction (PFC) for Interleaved Topology
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5 ; Tmb ≤ 118 °C; Square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
IFRM repetitive peak forward δ = 0.5 ; tp = 25 µs; Tmb ≤ 118 °C;
current
Square-wave pulse
IFSM
non-repetitive peak
tp = 10 ms; Tj(init) = 25 °C; SIN; Fig. 4
forward current
tp = 8.3 ms; Tj(init) = 25 °C; SIN; Fig. 4
Static characteristics
VF
forward voltage
IF = 10 A; Tj = 25 °C; Fig. 6
IF = 10 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 10 A
- - 20 A
- - 70 A
- - 80 A
-
1.5 2
V
- - 1.6 V
- 35 50 ns
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NXP Semiconductors
BYV10ED-600P
Ultrafast power diode
9. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
Conditions
With heatsink compound; Fig. 5
in free air
10
Zth(j-mb)
(K/W)
1
Min Typ Max Unit
- - 3 K/W
- 50 - K/W
aaa-017658
δ = 0.5
δ = 0.2
10-1 δ = 0.1
δ = 0.05
single pulse
10-2
10-6
105
104
10-3
10-2
10-1
1
tp (s)
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
10
BYV10ED-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
5 / 11
5 Page 
NXP Semiconductors
13. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Marking ................................................................... 2
8 Limiting values .......................................................3
9 Thermal characteristics .........................................5
10 Characteristics ....................................................... 6
11 Package outline ..................................................... 8
12 Legal information ...................................................9
12.1 Data sheet status ................................................. 9
12.2 Definitions .............................................................9
12.3 Disclaimers ...........................................................9
12.4 Trademarks ........................................................ 10
© NXP Semiconductors N.V. 2015. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 24 July 2015
BYV10ED-600P
Ultrafast power diode
BYV10ED-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2015
© NXP Semiconductors N.V. 2015. All rights reserved
11 / 11
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| PDF Descargar | [ Datasheet BYV10ED-600P.PDF ] | |
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