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PDF ATF-55143 Data sheet ( Hoja de datos )
| Número de pieza | ATF-55143 | |
| Descripción | Low Noise Enhancement Mode Pseudomorphic HEMT | |
| Fabricantes | AVAGO | |
| Logotipo |  |
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ATF-55143
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Avago Technologies’ ATF-55143 is a high dynamic range,
very low noise, single supply E-PHEMT housed in a
4-lead SC-70 (SOT-343) surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF-55143 ideal for cellular/PCS hand-
sets, wireless data systems (WLL/RLL, WLAN and MMDS)
and other systems in the 450 MHz to 6 GHz frequency
range.
Surface Mount Package SOT-343
Pin Connections and Package Marking
DRAIN
SOURCE
SOURCE
GATE
Note:
Top View. Package marking provides orientation and identification
“5F” = Device Code
“x” = Date code character identifies month of manufacture.
Features
High linearity performance
Single Supply Enhancement Mode Technology[1]
Very low noise figure
Excellent uniformity in product specifications
400 micron gate width
Low cost surface mount small plastic package SOT-
343 (4 lead SC-70)
Tape-and-Reel packaging option available
Lead Free Option Available
Specifications
2 GHz; 2.7V, 10 mA (Typ.)
24.2 dBm output 3rd order intercept
14.4 dBm output power at 1 dB gain compression
0.6 dB noise figure
17.7 dB associated gain
Lead-free option available
Applications
Low noise amplifier for cellular/PCS handsets
LNA for WLAN, WLL/RLL and MMDS applications
General purpose discrete E-PHEMT for other ultra low
noise applications
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
1 page  
ATF-55143 Typical Performance Curves, continued
17 25
16 24
15 23
14 22
13 21
12
2V
11 2.7V
3V
10
0 5 10 15 20 25 30 35
Idq (mA)
Figure 15. P1dB vs. Idq and Vds at 2 GHz.[1,2]
20
2V
19 2.7V
3V
18
0 5 10 15 20 25 30 35 40
Ids (mA)
Figure 16. Gain vs. Ids and Vds at 900 MHz.[1]
0.35
0.30
0.25
0.20
0.15 2V
2.7V
3V
0.10
0 5 10 15 20 25 30 35
Ids (mA)
Figure 17. Fmin vs. Ids and Vds at 900 MHz.
32
30
28
26
24
22
20 2V
2.7V
18 3V
16
0 5 10 15 20 25 30 35
Ids (mA)
Figure 18. OIP3 vs. Ids and Vds at 900 MHz.[1]
7
6
5
4
3
2
1
0 2V
-1 2.7V
3V
-2
0 5 10 15 20 25 30 35
Ids (mA)
Figure 19. IIP3 vs. Ids and Vds at 900 MHz.[1]
17
16
15
14
13
12
11 2V
2.7V
10 3V
9
0 5 10 15 20 25 30 35
Idq (mA)
Figure 20. P1dB vs. Idq and Vds at
900 MHz.[1,2]
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure
at 2.7 V, 10 mA bias. This circuit represents a trade-off between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been de-embedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I , is set with zero RF drive applied. As P1dB is approached,
dsq
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I , the device is running close to class
dsq
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V = 2.7V and I = 5 mA, I increases to 15 mA
DS dsq d
as a P1dB of +14.5 dBm is approached.
5
5 Page 
ATF-55143 Typical Scattering Parameters, V = 2.7V, I = 20 mA
DS DS
Freq.
GHz
Mag. S11 Ang.
dB MS2a1g. Ang.
0.1 0.997 -7.4
0.5 0.947 -35.8
0.9 0.860 -60.8
1.0 0.840 -66.6
1.5 0.739 -91.7
1.9 0.672 -108.6
2.0 0.658 -112.7
2.5 0.597 -131.7
3.0 0.554 -149.7
4.0 0.515 175.4
5.0 0.523 143.7
6.0 0.538 118.2
7.0 0.559 96.4
8.0 0.579 75.2
9.0 0.615 56
10.0 0.690 37.7
11.0 0.748 21.7
12.0 0.787 7.9
13.0 0.816 -7.3
14.0 0.841 -22.9
15.0 0.867 -37.3
16.0 0.862 -50.5
17.0 0.877 -59.7
18.0 0.921 -70
23.29
22.72
21.67
21.37
19.83
18.68
18.41
17.16
16.04
14.17
12.55
11.06
9.78
8.62
7.65
6.73
5.57
4.48
3.5
2.55
1.15
-0.44
-1.83
-2.99
14.603
13.682
12.116
11.705
9.802
8.587
8.323
7.21
6.341
5.114
4.239
3.572
3.084
2.699
2.413
2.171
1.9
1.675
1.496
1.341
1.142
0.95
0.81
0.709
174.2
152
133
128.8
110.6
98.5
95.8
82.7
70.9
49.1
28.6
9.6
-8.4
-25.9
-43.3
-62.1
-80.3
-97.3
-114.9
-133.5
-152.1
-169
176.3
160.6
Mag.S12
0.005
0.024
0.038
0.041
0.051
0.057
0.059
0.065
0.069
0.078
0.084
0.09
0.095
0.098
0.107
0.117
0.122
0.126
0.128
0.13
0.124
0.118
0.116
0.111
Ang.
85.8
69.2
56.2
53.4
42.4
36
34.5
28.4
23
13.3
3.7
-5
-14.7
-24.2
-31
-44
-56.4
-68.5
-81.4
-95.1
-109.2
-121.9
-133.3
-147.1
Mag.S22
0.755
0.713
0.652
0.633
0.56
0.513
0.503
0.455
0.409
0.328
0.267
0.232
0.201
0.162
0.113
0.055
0.096
0.164
0.210
0.277
0.386
0.483
0.555
0.612
Ang.
-4.4
-21.1
-34.6
-37.3
-48
-54
-55.3
-60.9
-65.7
-76.7
-90.7
-104.8
-119.6
-127.4
-136.5
160.9
75.9
45.5
23.7
3
-14.3
-26.3
-39.5
-53.9
MSG/MAG
dB
34.65
27.56
25.04
24.56
22.84
21.78
21.49
20.45
19.63
18.17
17.03
14.23
12.69
11.32
10.53
10.46
10.01
9.48
9.02
8.56
7.65
5.86
5.25
6.59
Typical Noise Parameters, V = 2.7V, I = 20 mA
DS DS
Freq F
min
GHz dB
Γ
opt
Mag.
Γ
opt
Ang.
R
n/50
0.5 0.20 0.65 17.6 0.1
0.9 0.25 0.55 23.6 0.1
1.0 0.26 0.53 28.3 0.1
1.9 0.39 0.49 49
0.09
2.0 0.4 0.48 51.5 0.09
2.4 0.47 0.38 62
0.08
3.0 0.56 0.32 79.6 0.07
3.9
0.69 0.19 120
0.06
5.0 0.85 0.18 -168.8 0.06
5.8 0.98 0.22 -135.4 0.08
6.0 1.01 0.22 -128.7 0.09
7.0 1.15 0.29 -94.6 0.15
8.0 1.32 0.35 -66.7 0.25
9.0 1.47 0.44 -45.7 0.38
10.0 1.58 0.54 -28.6 0.57
G
a
dB
25.79
23.9
23.45
19.94
19.6
18.34
16.71
14.8
13.14
12.3
12.12
11.38
10.74
10.04
9.1
40
35
30
MSG
25
20
15
|S21|2
10
MAG
5
0
-5
0 5 10 15
FREQUENCY (GHz)
Figure 30. MSG/MAG and |S21|2 vs.
Frequency at 2.7V, 20 mA.
20
Notes:
1. F values at 2 GHz and higher are based on measurements while the F below 2 GHz have been extrapolated. The F values are based on
min
mins
min
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F is
min
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
11
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| Páginas | Total 20 Páginas | |
| PDF Descargar | [ Datasheet ATF-55143.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| ATF-55143 | Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package | .gif){kind=logo} Agilent(Hewlett-Packard) |
| ATF-55143 | Low Noise Enhancement Mode Pseudomorphic HEMT | AVAGO |
| ATF-55143-BLK | Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package | Agilent(Hewlett-Packard) |
| ATF-55143-TR1 | Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package | Agilent(Hewlett-Packard) |
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